Preparation process of heat dissipation package for compact IGBT module

Abstract

The invention discloses a preparation process of a heat dissipation package for a compact IGBT module, and belongs to the field of IGBT packaging technologies. According to the preparation process ofthe heat dissipation package for the compact IGBT module, the heat dissipation and insulation work of an IGBT is completed through the packaging of silica gel and cycloresin gum, heat dissipation of the compact IGBT module is achieved, and the heat preservation and heat dissipation effects of the silica gel are improved by doping phase-change balls into the silica gel. When the temperature of thesilica gel is too high, the phase change balls are liquefied to absorb a large amount of heat, the temperature of the silica gel is not easy to rise too fast so as to assist heat dissipation, and theliquefied phase-change balls flow into capillary micropores of the silica gel at the moment, so that the contact area between the silica gel and the phase-change balls can be increased, and the heat exchange efficiency between the silica gel and the phase-change ball is greatly improved; and when the IGBT module works in a low-temperature environment and the temperature of the silica gel is greatly reduced due to the environment, the liquid phase-change balls are solidified to release a large amount of heat to preserve the heat of the working environment of an electronic element.

Description

technical field [0001] The invention relates to the field of IGBT packaging technology, more specifically, to a preparation technology for heat dissipation packaging of compact IGBT modules. Background technique [0002] IGBT, Insulated Gate Bipolar Transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor), with high input impedance and GTR of MOSFET The advantages of low conduction voltage drop, GTR saturation voltage drop, high current density, but large drive current, MOSFET drive power is small, fast switching speed, but large conduction voltage drop, small current density, IGBT Combining the advantages of the above two devices, the drive power is small and the saturation voltage is reduced. It is very suitable for the conversion system with a DC voltage of 600V and above, such as AC motors, frequency converters, switching power supplies, lighting circuits, t...

AI Technical Summary

Problems solved by technology

In general, IGBI composite busbars can meet the requirements, but for some IGBT busbars with high working intensity, the heat emitted by multiple groups of IGBT modules will affe

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