Organic electrochemical transistor with vertical structure and manufacturing method thereof

A vertical structure and transistor technology, applied in the direction of electrical solid-state devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as complex processes, shorten channels, etc., and achieve the effects of simple operation, improved performance, and low cost

Inactive Publication Date: 2020-04-21
FUZHOU UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in order to obtain nanometer-sized channel lengths, high-resolution photolithography, complex processes, and short-channel effects are o

Method used

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  • Organic electrochemical transistor with vertical structure and manufacturing method thereof
  • Organic electrochemical transistor with vertical structure and manufacturing method thereof
  • Organic electrochemical transistor with vertical structure and manufacturing method thereof

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preparation example Construction

[0026] The present invention also provides a method for preparing the organic electrochemical transistor with the above-mentioned vertical structure, comprising the following steps:

[0027] (1) An active layer film is deposited on a substrate with a patterned drain electrode by a spin-coating process and annealed to obtain an active layer;

[0028] (2) On the active layer obtained in step (1), spin-coat a mesh source electrode film by a spin-coating process and anneal;

[0029] (3) Depositing a polymer ion gel electrolyte on the mesh source electrode obtained in step (2) by spin coating or scraping coating and annealing to obtain an electrolyte layer;

[0030] (4) Preparing a gate electrode on the electrolyte layer obtained in step (3) by thermal evaporation to obtain an organic electrochemical transistor with a vertical structure.

Embodiment 1

[0033] 1) Wash the patterned ITO glass (1.5cm×1.5cm size) with acetone, ethanol, and distilled water (three times), and dry it with nitrogen to obtain a clean glass as the substrate;

[0034] 2) Spin-coat the dispersion of PEDOT:PSS at 1000rpm (60s) to prepare the active layer, and then anneal at 120°C for 1h, and the film thickness is about 200nm;

[0035] 3) On the PEDPT:PSS film obtained in step 2), a silver nanowire solution with a solubility of 1mg / ml was spin-coated at a rotation speed of 2000rpm (60s) to prepare a mesh source electrode, and then annealed at 120°C for 10min;

[0036] 4) Preparation of ion gel electrolyte: polyacrylonitrile, lithium bistrifluoromethanesulfonimide, ethylene carbonate and propylene carbonate were mixed in a mass ratio of 14.1:3.9:41:41 and heated in a 90°C water bath. Stir until clear, transparent colloidal gel state;

[0037] 5) Use a syringe to cover the silicon wafer with the electrolyte gel prepared in step 4), and then spin the soluti...

Embodiment 2

[0040] 1) Clean the patterned ITO glass (1.5cm×1.5cm size) with acetone, ethanol, and distilled water (three times), and dry it with nitrogen to obtain a clean glass as the substrate;

[0041] 2) On the basis of step 1), spread the PEDOT:PSS dispersion on the edge of the junction between the scraper and the silicon wafer. The distance between the scraper and the silicon substrate is 100 μm, and the scraping speed is 20mm / s, and then annealed at 120°C for 1h , the film thickness is about 300-400nm.

[0042] 3) On the basis of step 2), spread the silver nanowire solution with a solubility of 1mg / ml on the edge of the substrate, roll the coating rod along a specific direction at a speed of 20mm / s, and then anneal at 120°C for 10min ;

[0043] 4) Preparation of ion gel electrolyte: polyacrylonitrile, lithium bistrifluoromethanesulfonimide, ethylene carbonate and propylene carbonate were mixed in a mass ratio of 14.1:3.9:41:41 and heated in a 90°C water bath. Stir until clear, tr...

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Abstract

The invention relates to an organic electrochemical transistor with a vertical structure and a manufacturing method thereof. The organic electrochemical transistor with the vertical structure is a topgate vertical structure and comprises a substrate, a drain electrode, an active layer, a mesh-shaped source electrode, an electrolyte layer and a gate electrode in sequence from bottom to top. The manufacturing method comprises the following steps: 1) depositing a polymer conductive film on the substrate with a patterned drain electrode through a spin-coating process and annealing to manufacturethe active layer; 2) depositing a mesh-shaped source electrode film on the active layer through the spin-coating process and annealing; 3) depositing a polymer ion gel electrolyte on the mesh-shaped source electrode through a spin-coating or blade-coating process, and annealing to manufacture the electrolyte layer; and 4) manufacturing the gate electrode on the electrolyte layer through a thermalevaporation method to obtain the organic electrochemical transistor with the vertical structure. The organic electrochemical transistor manufactured by the method can reduce a size of a device, improve performance of the device and expand an application range of the device.

Description

technical field [0001] The invention belongs to the technical field of electronic materials and devices, and in particular relates to a vertical organic electrochemical transistor and a preparation method thereof. Background technique [0002] The most important performance parameter of organic electrochemical transistors is transconductance, which determines the degree to which the device can amplify the input signal. In this regard, organic electrochemical transistors possess higher transconductance values ​​compared with other electrolyte-gate field-effect transistors. According to the Bernards model, for depletion-mode organic electrochemical transistors, the transconductance value is closely related to the material of the active layer and the geometry of the device. So far, the active layer materials of organic electrochemical transistors have been intensively studied. A lot of work is dedicated to optimizing the morphology and structure of the active layer at the mic...

Claims

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Application Information

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IPC IPC(8): H01L51/05H01L51/10H01L51/40
CPCH10K71/12H10K10/491H10K10/464H10K10/82
Inventor 陈惠鹏严育杰郭太良陈耿旭陈奇珍巫晓敏柯钰丹
Owner FUZHOU UNIVERSITY
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