Infrared transparent perovskite light-emitting diode and preparation method thereof
A technology of light-emitting diodes and perovskites, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as low luminance, difficulty in performance improvement, narrow color gamut, etc., and achieve the effect of transparent conduction
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[0033] The steps of the preparation method of the infrared transparent perovskite light-emitting diode of the present invention are as follows:
[0034] Step 1), preparing an indium chromium oxide infrared transparent conductive layer 2 on a flat substrate 1;
[0035] Step 2), preparing a perovskite crystallization induction layer 3 on the indium chromium oxide infrared transparent conductive layer 2;
[0036] Step 3), preparing a perovskite light emitting layer 4 on the perovskite crystallization inducing layer 3;
[0037] Step 4), preparing a dielectric / metal / dielectric structure transparent conductive layer 5 on the perovskite light-emitting layer 4 .
[0038] Specifically, the preparation method of the infrared transparent perovskite light-emitting diode of the present invention comprises the following steps:
[0039] 1) Put the cleaned flat glass substrate 1 with a thickness of 1mm and the strip mask into the electron beam vacuum coating equipment, and vacuumize it. Whe...
Embodiment 1
[0052] 1) Put the cleaned 1 mm thick glass plane substrate together with the strip mask into the electron beam vacuum coating equipment, and vacuumize it. When the vacuum degree is 2×10 -3 In Pascal, set the substrate temperature to 300°C, adjust the ion source argon-oxygen pressure ratio to 2:1, evaporate at a rate of 0.5nm / s, and evaporate a 150nm indium chromium oxide infrared transparent conductive layer, in which the chromium content is 5%.
[0053] 2) After the evaporation is completed and the substrate is cooled, take it out and place it in the ultraviolet ozone treatment equipment for 15 minutes. Afterwards, take it out and place it on the spin coater bracket. By adjusting the rotation speed of the spin coater to 2500 revolutions per minute, PEDOT:PSS forms a layer of perovskite crystallization induction layer with a thickness of 30 nm on the surface of the transparent electrode. ℃ oven for 30 minutes.
[0054] 3) Transfer the cooled above-mentioned substrate to the g...
Embodiment 2
[0059] 1) Put the cleaned 1 mm thick glass plane substrate together with the strip mask into the electron beam vacuum coating equipment, and vacuumize it. When the vacuum degree is 2×10 -3 In Pascal, set the substrate temperature to 300°C, adjust the ion source argon-oxygen pressure ratio to 2:1, evaporate at a rate of 0.5nm / s, and evaporate a 150nm indium chromium oxide infrared transparent conductive layer, in which the chromium content is 5%.
[0060] 2) After the evaporation is completed and the substrate is cooled, take it out and place it in the ultraviolet ozone treatment equipment for 15 minutes. Afterwards, take it out and place it on the spin coater bracket. By adjusting the rotation speed of the spin coater to 2500 revolutions per minute, PEDOT:PSS forms a layer of perovskite crystallization induction layer with a thickness of 30 nm on the surface of the transparent electrode. ℃ oven for 30 minutes.
[0061] 3) Transfer the cooled above-mentioned substrate to the g...
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