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CAPACITOR and semiconductor device having the same

A capacitor and semiconductor technology, applied in the direction of capacitors, semiconductor devices, fixed capacitors, etc., can solve problems such as increasing the integration of capacitors

Pending Publication Date: 2020-04-24
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, if the size of a DRAM device is to be reduced, the integration of capacitors needs to be increased

Method used

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  • CAPACITOR and semiconductor device having the same
  • CAPACITOR and semiconductor device having the same
  • CAPACITOR and semiconductor device having the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The inventive concept will now be explained with reference to the accompanying drawings. Like reference numerals may refer to like components throughout the drawings.

[0019] figure 1 An example of a capacitor according to the inventive concept is shown.

[0020] refer to figure 1 , the capacitor 90 according to the concept of the present invention may include a lower metal electrode (also referred to as a lower electrode or a metal lower electrode) 10 with a first crystal grain size S1 in the range of several nanometers, having a crystal expansion ratio (crystal expansion ratio) The dielectric layer 20 has a second grain size S2 that is larger than the first grain size S1 and an upper metal electrode (also referred to as an upper electrode or a metal electrode) has a third grain size S3 that is smaller than the second grain size S2. upper electrode) 30.

[0021] For example, the lower electrode 10 may include a first metal having good conductivity, and may have a ...

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PUM

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Abstract

The present invention provides a capacitor and a semiconductor device having the same. The capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2018-0123588 filed on October 17, 2018 at the Korean Intellectual Property Office, the disclosure of which is hereby incorporated by reference in its entirety. technical field [0002] The inventive concept relates to a capacitor and a semiconductor device having the same, and more particularly, to a MIM (Metal-Insulator-Metal) capacitor and a semiconductor device having the same. The inventive concept also relates to a method of manufacturing a capacitor, and more particularly, to a MIM (Metal-Insulator-Metal) capacitor and a semiconductor device having the same. Background technique [0003] The physical and chemical properties of polysilicon impose a lower limit on the resistance of the upper and lower electrodes of a PIP (polysilicon-insulator-polysilicon) capacitor. In addition, when a bias voltage is applied to the PIP capacitor, a depletion region is generated in polysilicon, and the electro...

Claims

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Application Information

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IPC IPC(8): H01L23/64H01L27/108B82Y30/00
CPCH01L28/60B82Y30/00H10B12/30H01G4/008H01G4/10H01G4/33H01G4/1272H01G4/085H10B12/03H01L28/75H01L28/91H01L21/7687H01L29/40114H10B12/315
Inventor 金恩善姜相列郑圭镐曺圭镐文孝植
Owner SAMSUNG ELECTRONICS CO LTD