CNT-IGZO thin film heterojunction bipolar transistor and preparation method and application thereof

Abstract

The invention discloses a CNT-IGZO thin film heterojunction bipolar transistor and a preparation method and application thereof. The CNT-IGZO thin film heterojunction bipolar transistor comprises an IGZO layer and a CNT thin film covering the surface of the IGZO layer. The preparation method comprises the steps of preparing the IGZO layer as a channel material by adopting a radio frequency magnetron sputtering method, and depositing the CNT thin film on the surface of the IGZO layer by adopting a solution dispensing method. According to the invention, the upper surface of the IGZO prepared bythe radio frequency magnetron sputtering method is very smooth; the roughness of the IGZO is smaller than 0.2 nm, and the P-type CNT thin film is directly deposited on the surface of the IGZO, so thatthe electrical performance of a P-type organic semiconductor can be close to that of an N-type oxide semiconductor; and compared with the prior art, the bipolar transistor has effectively improved electrical performance; large-area array can be realized; and the bipolar transistor has a great application prospect.

Description

technical field [0001] The invention belongs to the technical field of electronic devices, and in particular relates to a CNT-IGZO thin film heterojunction bipolar transistor and its preparation method and application. Background technique [0002] With the development of semiconducting carbon nanotube purification technology, semiconducting carbon nanotubes with high purity can now be obtained. High-purity carbon nanotubes exhibit p-type characteristics at room temperature and have high hole mobility; in addition, Due to its good flexibility and simple large-area preparation method, semiconducting carbon nanotubes have good application prospects in flexible and transparent logic circuits. [0003] Forming complementary p-channel and n-channel inverter transistors in logic circuits is the most efficient and energy-saving design method. However, for semiconducting carbon nanotubes, due to their narrow bandgap (about 1.5eV ), so that holes are used as the main carriers to tra...

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Problems solved by technology

However, in the prior art, SWCNT / IGZO heterojunction bipolar transistors have been prepared by the solution method. Due to the low purity of the CNTs used, the performance is relatively poor, and the mobility of the IGZO prepared by the solution method is also very low, so the performance of the bipolar transistor prepared by it is poor, and it uses Al as the source and drain electrodes of the device, which causes a large contact resistance between the electrode and IGZO, which in turn affects the performance of the device

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