A double-pulse laser stealth cutting method

Abstract

The invention relates to a double-pulse laser hidden cutting method. The double-pulse laser hidden cutting method comprises the steps that a to-be-machined workpiece is placed on a machining platformof a multi-axis moving platform; a double-pulse laser device is taken, and laser beams emitted by the double-pulse laser device are focused onto the to-be-machined workpiece through a light path; themulti-axis moving platform is adjusted, and the focus point of the laser beams is located at the proper cutting position in the to-be-machined workpiece; the double-pulse laser device is electricallyconnected with a control system; the control system and the double-pulse laser device are started, the control system controls the double-pulse laser device to emit long-pulse laser beams to preheat the to-be-machined workpiece, then, short-pulse laser beams are emitted to cut the to-be-machined workpiece, and the process is alternately conducted; and the multi-axis moving platform is moved in thecutting process, and cutting of the whole workpiece is finished. According to the double-pulse laser hidden cutting method, through long-pulse laser focal spot preheating and short-pulse laser focalspot ablation, the controllable hidden cutting crack direction is achieved, and the damage area of hidden cutting in the material is reduced.

Description

technical field [0001] The invention relates to the technical field of cutting processing, in particular to a double-pulse laser stealth cutting method. Background technique [0002] With the development of the microelectronics industry, devices are becoming smaller and lighter. It will also bring many problems. The size of a single chip is getting smaller and smaller, the thickness of the wafer is getting thinner and thinner, and the wafer is more likely to break. In order to reduce coupling and crosstalk, low-k materials need to be added in the production of IC chips. , but the adhesion between low-k materials and silicon substrates is low, and film detachment and breakage are prone to occur when using traditional cutting methods, which further increases the complexity and difficulty of wafer cutting. Traditional laser cutting focuses the laser on On the surface of the wafer, due to the edge absorption of the laser, laser processing will produce micro-cracks or heat-affec...

AI Technical Summary

Problems solved by technology

It will also bring many problems. The size of a single chip is getting smaller and smaller, the thickness of the wafer is getting thinner and thinner, and the wafer is more likely to break. In order to reduce coupling and crosstalk, low-k materials need to be added in the production of IC chips. , but the adhesion between low-k materials and silicon substrates is low, and film detachment and breakage are prone to occur when using traditional cutting methods, which further increases the complexity and difficulty of wafer cutting. Traditional laser cutting focuses the laser on On the surface of the wafer, due to the edge absorption of the laser, laser processing will produce micro-cracks or heat-affected zones

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