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Methods and apparatus for controlling warpage in wafer level packaging processes

A wafer-level packaging and process technology, applied in metal material coating process, semiconductor/solid-state device manufacturing, vacuum evaporation plating, etc., can solve problems such as obstacles and lower yields

Pending Publication Date: 2020-05-05
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Warpage hinders the ability to form fine-pitch RDL layers on the wafer, greatly reducing yield

Method used

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  • Methods and apparatus for controlling warpage in wafer level packaging processes
  • Methods and apparatus for controlling warpage in wafer level packaging processes
  • Methods and apparatus for controlling warpage in wafer level packaging processes

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Embodiment Construction

[0021] The disclosed methods and apparatus allow for warpage correction during fan-in and fan-out wafer level packaging processes. Warpage correction may be performed before the first, second and / or nth redistribution layer (RDL) is formed. Warpage correction can also be inserted at any step during RDL fabrication. The method can be done in a carrierless based wafer level packaging process or with a carrier based wafer level packaging process. Even though carrier-based wafer-level packaging processes offer some degree of rigidity, warpage can become a consideration as more and more layers are stacked. By controlling substrate warpage during the wafer-level packaging process, fine-pitch RDL patterning can be achieved with in-wafer yield for high input / output (I / O) inter-chip interconnect routing. The technology of the present principles introduces neither additional material into the wafer-level packaging process nor an expensive carrier process requiring additional bonding / s...

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PUM

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Abstract

The invention discloses methods and apparatus for controlling warpage in wafer level packaging processes. Methods and apparatus for producing fine pitch patterning on a substrate are disclosed. Warpage correction of the substrate is accomplished on a carrier or carrier-less substrate. A first warpage correction process is performed on the substrate by raising and holding a temperature of the substrate to a first temperature and cooling the carrier-less substrate to a second temperature. Further wafer level packaging processing is then performed such as forming vias in a polymer layer on the substrate. A second warpage correction process is then performed on the substrate by raising and holding a temperature of the substrate to a third temperature and cooling the substrate to a fourth temperature. With the warpage of the substrate reduced, a redistribution layer may be formed on the substrate with a 2 / 2 [mu]m l / s fine pitch patterning.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of U.S. Provisional Patent Application Serial No. 62 / 751,200, filed October 26, 2018, which is incorporated herein by reference in its entirety. technical field [0003] Embodiments of the present principles relate generally to semiconductor processes for packaging semiconductor devices. Background technique [0004] Semiconductor wafers are processed to form structures on the surface of the wafer. Structures on specific areas of the wafer can be linked together to form microcircuits. A wafer may have many different microcircuits built up on the surface of the wafer during processing. Once wafer processing has been completed, the wafer is diced or diced to separate the microcircuits into semiconductor "chips." Chips often contain complex circuitry that requires interaction with external components. The internal circuitry of the chip is too small to connect directly to external co...

Claims

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Application Information

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IPC IPC(8): H01L21/56H01L21/67
CPCH01L21/67253H01L21/67109H01L21/67017H01L21/56H01L21/67288H01L21/67115H01L21/67248H01L23/562H01L2224/96H01L2224/94H01L24/03H01L24/19H01L2924/3511H01L2224/19H01L2224/03H01L21/76816H01L21/76846H01L21/76828H01L21/304H01L21/02266H01L21/02118H01L21/306H01L21/31105H01L21/027C23C14/541H01L2224/02372H01L2224/0233H01L24/08
Inventor P·利安托M·拉菲M·A·B·S·苏莱曼G·H·施Y·X·K·安S·斯如纳乌卡拉苏A·桑达拉扬K·埃卢马莱
Owner APPLIED MATERIALS INC
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