Graphene/lead sulfide infrared detector and manufacturing method thereof

An infrared detector, lead sulfide technology, used in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of complex process, low efficiency, poor quality of lead sulfide film formation, etc. Simple process and good experimental repeatability

Pending Publication Date: 2020-05-08
CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method is complex in process, low in efficiency and poor in experimental repeatability
The chemical water bath method is a method for preparing lead sulfide with an extremely simple process and good experimental repeatability. However, the lead sulfide prepared by this method on the surface of graphene and metal electrodes is different due to the different growth rates of lead sulfide on the surface of different materials. Poor quality of lead film formation resulting in almost no detector response

Method used

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  • Graphene/lead sulfide infrared detector and manufacturing method thereof
  • Graphene/lead sulfide infrared detector and manufacturing method thereof
  • Graphene/lead sulfide infrared detector and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] refer to figure 1 and figure 2 , are respectively a flowchart of an embodiment of a preparation method of a graphene / lead sulfide infrared detector and a schematic cross-sectional structure diagram of an embodiment of a graphene / lead sulfide infrared detector of the present invention. Specifically, a kind of preparation method of graphene / lead sulfide infrared detector comprises the following steps:

[0039] S10: prepare a graphene film and transfer it to a clean substrate; then perform step S20;

[0040] In this embodiment, a silicon wafer with a silicon dioxide layer on its surface is selected as the substrate 1 .

[0041] In this embodiment, before using the substrate 1, ultrasonically clean it with acetone, alcohol, and deionized water for 10 minutes, and then dry it with nitrogen for use; then, on the copper foil base, use chemical vapor deposition to prepare single-layer graphene Film 2.

[0042] In this implementation, the prepared graphene film 2 is transfe...

Embodiment 2

[0054] In the present embodiment, it is intended to prepare a graphene / lead sulfide infrared detector with a double-layer graphene film 2, and its structure is similar to figure 2 , the difference is that in this embodiment, the graphene film 2 has two layers.

[0055] In this embodiment, the preparation method can refer to Example 1, the difference is:

[0056] In the present embodiment, the transfer graphene film step in step S10 needs to be repeated once to obtain a double-layer graphene film 2;

[0057] The ligand of the lead sulfide quantum dots used in the preparation of the lead sulfide seed layer 4 is EDT;

[0058] Further, other steps are the same as in Example 1, and finally a graphene / lead sulfide infrared detector with two layers of graphene film 2 is obtained.

[0059] After testing, the graphene / lead sulfide infrared detector of the two-layer graphene film 2 obtained by the steps in this embodiment measures the responsivity of the device under the incident lig...

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Abstract

The invention discloses a graphene/lead sulfide infrared detector and a manfuacturing method thereof. The graphene/lead sulfide infrared detector comprises a substrate which is sequentially covered with a graphene film, metal electrodes, a lead sulfide seed layer and a lead sulfide nanocrystalline film layer upwards. The metal electrodes are laid at two ends of the graphene film respectively. In the invention, the lead sulfide seed layer is introduced to the surfaces of the graphene and the metal electrodes, and lead sulfide nanocrystalline grows under assistance of the seed layer so that a compact, flat and uniform high-quality lead sulfide nanocrystalline thin film layer is obtained, and finally, the high-responsivity infrared detector is realized.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic devices, and relates to a graphene / lead sulfide infrared detector and a preparation method thereof. Background technique [0002] Infrared detector is a device that converts infrared light signals into electrical signals. According to the different response methods of devices to infrared light radiation, infrared detectors can be divided into photoconductive type, built-in electric field photovoltaic type, photopyroelectric type and radiometric type. Thermometer type. Infrared detector is an important technology of modern national defense and military, which is convenient for officers and soldiers to observe and operate at night, in smog and fog. At present, the widely used infrared detector technology includes cooling and uncooling. Among them, cooling infrared imaging requires complex refrigeration equipment, which makes the system bulky and difficult for officers and soldiers to fig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/09H01L31/032H01L31/18
CPCH01L31/0324H01L31/09H01L31/18Y02P70/50
Inventor 冷重钱申钧聂长斌张之胜杨俊汤林龙冯双龙魏兴战史浩飞
Owner CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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