A kind of tvs device and manufacturing method thereof

Abstract

The invention provides a TVS device and a manufacturing method thereof. The TVS device comprises: a semiconductor substrate of a first doping type; a deep well of a first and a second doping type arranged on the semiconductor substrate; type deep well and the first doping type deep well; the first second doping type heavily doped region arranged in the first second doping type deep well; the second second doping type deep well arranged in the second The well region of the first doping type and the first heavily doped region of the first doping type; the heavily doped region of the second first doping type and the second heavily doped region of the second doping type arranged in the well region of the first doping type a heavily doped region; a third heavily doped region of the second doping type located in the well region of the first doping type and a deep well of the second doping type; and a well region disposed in the well region of the first doping type The first doping type doping region. The TVS device provided by the invention has simple structure, low cost, good isolation effect, stronger current discharge capability and smaller capacitance.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a TVS device and a manufacturing method thereof. Background technique [0002] In the whole machine and system, unexpected voltage transients and surges are often encountered, causing the semiconductor devices in the whole machine and system to be burned or broken down, resulting in damage to the whole machine and system. Therefore, TVS (Transient Voltage Suppressor, Transient Voltage Suppressor), as a silicon PN junction high-efficiency protection device, is widely used in various I / O interfaces due to its fast response time and strong ESD resistance. [0003] At present, the transmission rate of high-speed interfaces represented by HDMI (High-Definition Multimedia Interface, high-definition multimedia interface) is getting faster and faster, even up to 5Gbps. In addition, in the actual driver chip, there are as many as several hundred pins, and each pin has ESD risk. In...

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Problems solved by technology

[0003] At present, the transmission rate of high-speed interfaces represented by HDMI (High-Definition Multimedia Interface, high-definition multimedia interface) is getting faster and faster, even up to 5Gbps. In addition, in the actual driver chip, there are as many as several hundred pins, and each pin has ESD risk. In order to protect as many I / O ports as possible while not occupying too much area , which has higher requirements for the integration of TVS; in order to increase the current capability of ESD, the junction area of ​​TVS devices is usually increased, which will lead to a significant increase in leakage, so that the static power consumption of the device is also reduced. obviously increase

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