Hexagonal interlocked electrode three-dimensional silicon detector

Abstract

The invention discloses a hexagonal interlocked electrode three-dimensional silicon detector. The detector comprises a hexagonal-prism-shaped isolation silicon body, and a central electrode is axiallyarranged in the center of the isolation silicon body; six side surfaces of the isolation silicon body are provided with first and second trench electrodes which are spliced up and down; the first trench electrode is formed by buckling two C-shaped trench electrodes, wherein metal contact layers are arranged at the tops of the first trench electrode and the central electrode, and a silicon dioxideprotective layer is arranged at the top of the isolation silicon body between the metal contact layers; and silicon dioxide protective layers are arranged at the bottoms of the second trench electrode, the central electrode and the isolation silicon body. According to the invention, the hexagonal interlocked electrode three-dimensional silicon detector prepared by the method is small in dead zone, uniform in internal electric field distribution, good in charge collection performance, good in unit independence between detection units, high in detection efficiency and high in utilization rate of silicon wafers.

Description

technical field [0001] The invention belongs to the technical field of high-energy physics and astrophysics, and relates to a three-dimensional silicon detector with hexagonal interlocking electrodes. Background technique [0002] In 1997, S.Parker et al. first proposed the first generation of silicon detectors with three-dimensional columnar electrodes. There is a high electric field area near the electrode of the detector, and a low electric field area in the center of electrode symmetry. The uneven distribution of the electric field makes the silicon detector in high radiation It is limited when used in the environment; in order to further enhance the radiation resistance of silicon detectors, in 2009, scientists from the Brookhaven National Laboratory in the United States proposed a new type of three-dimensional silicon detector, that is, a three-dimensional trench electrode silicon detector. The detection units of the columnar electrode silicon detector and the three-di...

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Problems solved by technology

[0003] However, due to the 10% to 30% thick "dead zone" of unetched electrodes at the bottom of the three-dimensional trench electrode silicon detector, the electric field in the "dead zone" is extremely low, the electric field distribution is uneven, and the voltage cannot be exhausted. Electrons and The holes move slowly or even cannot move in the "dead zone", which causes the movement time of electrons and holes to become longer. Under strong radiation conditions, electrons and holes are easily captured by traps, which makes the electrical signal attenuate; the "dead zone" cannot be oriented Collecting electrons and holes, this area basically loses the detection function. When the three-dimensional trench electrode silicon detector is working, the particles can only be incident on one side, the detection efficiency of the silicon detector is low, and the "dead zone" when the detection unit forms an array makes the silicon detector unit independence

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