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Ferroelectric diode memory and preparation method thereof

A diode and storage technology is applied in the field of ferroelectric diode storage and its preparation, which can solve the problems of low storage density and application limitation, and achieve the effect of high storage density

Active Publication Date: 2020-05-12
SOUTH CHINA NORMAL UNIVERSITY
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the storage density of ferroelectric diode memory in the prior art is low, and its application is limited

Method used

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  • Ferroelectric diode memory and preparation method thereof
  • Ferroelectric diode memory and preparation method thereof
  • Ferroelectric diode memory and preparation method thereof

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preparation example Construction

[0034] The applicant reduces the area of ​​a single metal electrode to below the micron level through optimized experimental schemes and steps, and provides a method for preparing a ferroelectric diode memory, including the following steps:

[0035] S1, depositing a layer of oxide bottom electrode on the single crystal substrate;

[0036] Specifically, using the laser pulse deposition method (PLD method, which is an experimental method that uses laser to bombard the target, and then deposits the bombarded material on different substrates to obtain a thin film of deposit), the La 0.7 Sr 0.3 MnO 3 Ceramic targets and BiFeO 3 The ceramic target is placed in the PLD deposition chamber, and the crystal orientation is (001) SrTiO 3 The substrate is placed on the sample stage of the PLD deposition chamber, and then the PLD deposition chamber is evacuated to 10 -4 Next, raise the temperature to 650°C at a heating rate of 20°C / min, set the oxygen pressure to 15Pa, and the laser ene...

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Abstract

The invention relates to a ferroelectric diode memory, which comprises a single crystal substrate, an oxide bottom electrode and a BFO ferroelectric film which are sequentially arranged in a stacked mode, wherein a plurality of metal electrodes are arranged on the surface of the BFO ferroelectric film at intervals, the BFO ferroelectric film is an epitaxial ferroelectric film, and the area of thesingle metal electrode is smaller than 0.3 square micron. The invention also provides a preparation method of the ferroelectric diode storage device. Compared with the prior art, the ferroelectric diode memory of the invention has the following characteristics that through ingenious structural design, a plurality of metal electrodes are arranged on the surface of a BFO epitaxial ferroelectric film, and the area of a single metal electrode is reduced to be less than 0.30 square micron, so that the area of the single metal electrode is designed to be less than micron, and the ferroelectric diodememory unit with high storage density is obtained.

Description

technical field [0001] The invention relates to the technical field of ferroelectric storage, in particular to a ferroelectric diode storage and a preparation method thereof. Background technique [0002] With the continuous development of emerging technologies such as the Internet of Things, cloud computing, and artificial intelligence, the amount of data generated globally every year shows a blowout growth, and the demand for data storage is also increasing. Among many new types of memory, ferroelectric memory (FRAM) has become a hotspot in the research of solid-state memory devices in the world due to its potential high speed, low operating voltage and low power consumption. Ferroelectric memory is a storage device based on reversible spontaneous polarization of ferroelectric materials. The polarization of its positive and negative poles corresponds to data 0 and 1. However, ferroelectric memory will be in the process of reading information. Destroying the original polar...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/841H10N70/011
Inventor 樊贞田浚江赵磊谭政伟
Owner SOUTH CHINA NORMAL UNIVERSITY
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