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ETCHING solution COMPOSITION

A technology of composition and etching solution, applied in the directions of luminescent materials, chemical instruments and methods, etc., can solve the problems of decreased process efficiency, residues, and increased viscosity of etching solution, etc., to achieve the effect of improving process efficiency and inhibiting damage

Pending Publication Date: 2020-06-02
ENF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] When using a common etchant for a film containing silver (Ag), residue or re-adsorption occurs, and the viscosity of the etchant increases, making it difficult to etch nano-sized patterns.
In addition, if the silver film is excessively etched or etched unevenly, it will result in a poor profile on the side of the wiring.
[0005] In this regard, as an existing silver etching solution, a composition containing hydrogen peroxide or phosphoric acid has been disclosed, but when the coated silver film is etched for the purpose of protecting the nano pattern, the rate at which the etching solution penetrates the etching object decreases, There will be a problem that the efficiency of the process is significantly reduced, and the viscosity of the etching solution is too high, which will cause the disadvantage that the etching process cannot be carried out smoothly

Method used

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  • ETCHING solution COMPOSITION
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0080] The etching solution composition was prepared with the components shown in Table 1.

[0081] 【Table 1】

[0082]

experiment example 1

[0087] Experimental example 1: Etching rate evaluation

[0088] In order to evaluate the etching rate of the etchant compositions according to the examples and comparative examples, the laminated film Cut into a size of 20mmx30mm and used as a sample, the laminated film includes: the lower film is composed of Ti / Al / Ti as the source and drain layer (SD layer); the upper film is composed of ITO / AG / ITO.

[0089] After 10 kg of the evaluation chemical solution was loaded into a wet etcher, the prepared sample to be evaluated was etched at a temperature of 40° C. for 120 seconds. Rinse the etched sample with ultrapure water for about 30 seconds, and then use 3.0kgf / cm 2 Nitrogen drying was carried out under a certain pressure. The etching rate of the sample was expressed by comparing the ITO / AG / ITO film thicknesses before and after the etching treatment, and converting it into an etching rate per second as shown in Mathematical Formula 1 below. The thickness of the film was mea...

experiment example 2

[0092] Experimental Example 2: Residue Evaluation

[0093] In order to evaluate the residual degree of the etchant compositions of the examples and comparative examples after etching, each sample obtained according to Experimental Example 1 was observed by a scanning electron microscope, and the area of ​​the residual metal film in the region between the ITO / Ag / ITO wiring was It was judged whether residues were formed (10% per 1 unit area of ​​residues).

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Abstract

The present invention relates to an etching solution composition, and provides an etching solution composition capable of minimizing damage to the lower metal film in the process of etching the uppermetal film. According to the etching solution composition of the present invention, the damage of the lower film can be suppressed in the etching process of the upper film, the generation of metal precipitates can be minimized, the occurrence of skew (skew) can be prevented, and the process efficiency can be improved.

Description

technical field [0001] The invention relates to an etching solution composition (ETCHING COMPOSITION), which selectively etches an upper metal film and minimizes the formation of metal precipitates in the process. Background technique [0002] Microcircuits such as semiconductor devices and TFT-LCDs and OLEDs are completed through a series of photolithography processes as follows: conductive metal films or silicon oxide films of aluminum, aluminum alloys, copper, copper alloys, etc. formed on the substrate After uniformly coating photoresist (Photoresist) on insulating films such as silicon nitride films, and then irradiating light through a patterned mask, the desired pattern is formed on the photoresist by development, and the dry method or Wet etching transfers the pattern to the metal film or insulating film under the photoresist, and removes unnecessary photoresist through a lift-off process. [0003] On the one hand, with the development of the display field, there is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/30
CPCC23F1/30C23F1/02C09K11/06
Inventor 殷熙天金益俊李熙雄陈闰泰金希泰金世训
Owner ENF TECH