GaN-diamond-Si semiconductor structure, GaN-diamond-Si semiconductor device and preparation method

Abstract

The invention provides a GaN-diamond-Si semiconductor structure, a GaN-diamond-Si semiconductor device and a preparation method. The method comprises the steps of employing a thick AlxGa<1-x>N lamination as a buffer layer before a bonding process; only reserving the AlxGa<1-x>N layer with the minimum x value close to a GaN channel layer is to serve as an AlxGa<1-x>N barrier layer after the bondingprocess; and replacing a first Si substrate by a new second Si substrate through diamond film bonding, wherein the second Si substrate preferably adopts a Si (100) substrate. According to the invention, the stress problem is solved, the preparation process is simple, the applicability is high, the prepared structure and device have good heat dissipation and reliability, the unit cost can be reduced, and the yield is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a GaN-diamond-Si semiconductor structure, device and preparation method. Background technique [0002] As a representative of the third-generation semiconductor materials, gallium nitride (GaN) has many excellent characteristics such as high critical breakdown electric field, high electron mobility, high two-dimensional electron gas concentration, and good high-temperature working ability. Therefore, GaN-based third-generation semiconductor devices, such as high electron mobility transistors (HEMTs) and heterojunction field effect transistors (HFETs), have been applied, especially in fields requiring high power and high frequency such as radio frequency and microwave. has obvious advantages. [0003] In the manufacture of existing GaN semiconductor structures or devices, SiC or Si is usually used as a substrate to grow heteroepitaxial thin films. Although the effective lat...

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Problems solved by technology

[0005] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of GaN-diamond-Si semiconductor structure, device and preparation method, be used to solve prior art in GaN semiconductor structure, because AlGaN transitional buffer layer is thicker The problem of poor heat dissipation

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