Method and device for depositing thin film on inner wall of small hole

A technology of film deposition and hole inner wall, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problems of cost production efficiency limitation, high target ion density, high sputtering power, etc. Large-scale low-cost production, improved deposition efficiency, and high universality
CN111235539BActive Publication Date: 2021-04-20摩科斯电子科技(苏州)有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
摩科斯电子科技(苏州)有限公司
Publication Date
2021-04-20

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Abstract

The invention provides a method and a device for depositing a thin film on the inner wall of a small hole, belonging to the technical field of thin film deposition. On the inner wall of the small hole of the material to be sputtered, the target material is a cylindrical target material, and the diameter of the target material is 100-200 mm; during the sputtering process, the material to be sputtered is controlled to rotate at a uniform speed, so as to achieve the target ions in the small Uniform deposition on the inner wall of the hole. In the present invention, the target material is inclined, on the one hand, a small diameter target material can be used to achieve uniform deposition in a large area, which improves the deposition efficiency, reduces the loss of the target material, and saves costs; on the other hand, the deposition of the inclined target magnetron sputtering The method can make the target ions shoot at a certain angle to the material to be sputtered, so that the target ions shoot at a certain angle to the inner wall of the small hole, instead of the direct sputtering, the deposition direction is parallel to the inner wall of the small hole, and the deposition efficiency and combination Strength is better.
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Description

technical field

[0001] The invention belongs to the technical field of thin film deposition, and in particular relates to a method for depositing a thin film on the inner wall of a small hole. In addition, the invention also relates to a thin film deposition device on the inner wall of a small hole. Background technique

[0002] Magnetron sputtering deposition uses the principle that ions have a certain kinetic energy after being accelerated in an electric field, and guides the gas ions to the sputtering target to excite the surface ions of the target, and then drives the sputtered target ions in a certain direction under the action of the electric field. Shooting to the substrate material, so as to realize the deposition of the thin film on the substrate surface, because of its uniform film formation, high film-base bonding force and high film formation rate, it has been widely used in practical engineering.

[0003] At present, in actual engineering, when it is necessary t...

Claims

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