Method and device for depositing thin film on inner wall of small hole

A technology of film deposition and hole inner wall, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problems of cost production efficiency limitation, high target ion density, high sputtering power, etc. Large-scale low-cost production, improved deposition efficiency, and high universality

Active Publication Date: 2021-04-20
摩科斯电子科技(苏州)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] When using the method of preventing cylindrical targets in the inner hole, the cylindrical target needs to be able to be placed in the inner hole and leave a certain space, which requires a separate cylindrical target for each inner hole, and requires Supporting customized equipment has many limitations in terms of cost and production efficiency
The high-power direct sputtering method is suitable for micropores between a few microns and tens of microns, and this method requires a large-diameter target, and due to the high sputtering power and the high ion density of the target, the resulting target The loss is very serious and the cost is high

Method used

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  • Method and device for depositing thin film on inner wall of small hole
  • Method and device for depositing thin film on inner wall of small hole
  • Method and device for depositing thin film on inner wall of small hole

Examples

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Effect test

Embodiment 1

[0037] A thin film deposition method on the inner wall of a small hole, such as image 3 As shown, the target 1 is arranged obliquely above the material 2 to be sputtered, so that the target ions strike the inner wall of the small hole 201 of the material 2 to be sputtered at a set angle. In this embodiment, 95% alumina ceramics are used as the material 2 to be sputtered, and the material 2 to be sputtered is provided with a small hole 201 with a diameter of 0.2 mm and a depth of 1.2 mm, and a Ti metal thin film is formed on the inner wall of the small hole 201. deposition.

[0038] The deposition method of this embodiment specifically includes the following steps:

[0039] (1) Ultrasonic cleaning is performed on alumina ceramics for 10-20 minutes. After being dried with 99.9% dry nitrogen for 3 minutes, it is dried in an oven for 20-30 minutes under an air atmosphere at a drying temperature of 150-200° C. to obtain the Sputtering material 2: check the material 2 to be sputt...

Embodiment 2

[0043] In this embodiment, zirconia ceramics are used as the material 2 to be sputtered, and a small hole 201 with a diameter of 30 mm and a depth of 210 mm is opened on the material 2 to be sputtered, and Si film is deposited on the inner wall of the small hole 201 .

[0044] The deposition method of this embodiment specifically includes the following steps:

[0045] (1) Ultrasonic cleaning is performed on zirconia ceramics for 10-20 minutes, and after drying with 99.9% dry nitrogen for 3 minutes, they are dried in an oven for 20-30 minutes under an air atmosphere at a drying temperature of 150-200° C. Sputtering material 2: check the material 2 to be sputtered to ensure that the inner wall of the small hole 201 is clean and free of impurities, and perform radio frequency cleaning before magnetron sputtering. The power of the radio frequency cleaning is 100W, and the cleaning time is 3-5 minutes.

[0046] (2) Use target 1 (Si target) to start magnetron sputtering, the angle bet...

Embodiment 3

[0049] In this embodiment, Fe is used as the material 2 to be sputtered, and a small hole 201 with a diameter of 100 mm and a depth of 300 mm is opened on the material 2 to be sputtered, and a Mo metal thin film is deposited on the inner wall of the small hole 201 .

[0050] The deposition method of this embodiment specifically includes the following steps:

[0051] (1) Ultrasonic cleaning is performed on Fe for 10-20 minutes. After being blown dry with 99.9% dry nitrogen for 3 minutes, it is dried in an oven for 20-30 minutes under an air atmosphere at a drying temperature of 150-200° C. to obtain the Material 2: Check the material 2 to be sputtered to ensure that the inner wall of the small hole 201 is clean and free of impurities, and perform radio frequency cleaning before magnetron sputtering. The power of the radio frequency cleaning is 100W for 3-5 minutes.

[0052] (2) Use target 1 (Mo target) to start magnetron sputtering, the angle between target 1 and the vertical s...

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Abstract

The invention provides a method and a device for depositing a thin film on the inner wall of a small hole, belonging to the technical field of thin film deposition. On the inner wall of the small hole of the material to be sputtered, the target material is a cylindrical target material, and the diameter of the target material is 100-200 mm; during the sputtering process, the material to be sputtered is controlled to rotate at a uniform speed, so as to achieve the target ions in the small Uniform deposition on the inner wall of the hole. In the present invention, the target material is inclined, on the one hand, a small diameter target material can be used to achieve uniform deposition in a large area, which improves the deposition efficiency, reduces the loss of the target material, and saves costs; on the other hand, the deposition of the inclined target magnetron sputtering The method can make the target ions shoot at a certain angle to the material to be sputtered, so that the target ions shoot at a certain angle to the inner wall of the small hole, instead of the direct sputtering, the deposition direction is parallel to the inner wall of the small hole, and the deposition efficiency and combination Strength is better.

Description

technical field [0001] The invention belongs to the technical field of thin film deposition, and in particular relates to a method for depositing a thin film on the inner wall of a small hole. In addition, the invention also relates to a thin film deposition device on the inner wall of a small hole. Background technique [0002] Magnetron sputtering deposition uses the principle that ions have a certain kinetic energy after being accelerated in an electric field, and guides the gas ions to the sputtering target to excite the surface ions of the target, and then drives the sputtered target ions in a certain direction under the action of the electric field. Shooting to the substrate material, so as to realize the deposition of the thin film on the substrate surface, because of its uniform film formation, high film-base bonding force and high film formation rate, it has been widely used in practical engineering. [0003] At present, in actual engineering, when it is necessary t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/54
CPCC23C14/3407C23C14/35C23C14/54
Inventor 陈英孙向明于凯凯
Owner 摩科斯电子科技(苏州)有限公司
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