Semiconductor device

Abstract

The invention discloses a semiconductor device comprising a first substrate structure which comprises a first semiconductor element and a first dielectric layer located on the first semiconductor element; a second substrate structure including a second semiconductor element and a second dielectric layer on the second semiconductor element; and a multifunctional conductive layer positioned betweenthe first substrate structure and the second substrate structure; wherein the two sides of the multifunctional conducting layer are connected with the first dielectric layer and the second dielectriclayer respectively, projections of the first semiconductor element and the second semiconductor element on a set plane fall into projections of the multifunctional conducting layer on the set plane,and the set plane is perpendicular to the thickness direction of the first dielectric layer; as well as a lead-out structure used for receiving / outputting an electric signal, penetrates through the first substrate structure along the thickness direction and extends to be in local contact with the multifunctional conductive layer.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, and in particular to a three-dimensionally stacked semiconductor device containing a plurality of semiconductor devices. Background technique [0002] In the electronics industry, three-dimensional (3D) stacking technology significantly contributes to the integration of semiconductor devices. To form a 3D stack, two or more chips are arranged one on top of the other and bonded. [0003] 3D stacking technology offers many potential advantages, including such as improved form factor, lower cost, enhanced performance, and greater integration through system-on-chip (SOC) solutions. The SOC architecture formed by 3D stacking enables high bandwidth connectivity of stacked semiconductor devices such as logic circuits and dynamic random access memory (DRAM). [0004] However, the above-mentioned 3D stacking technology still has many deficiencies, such as the interference between the exter...

AI Technical Summary

Problems solved by technology

[0004] However, the above-mentioned 3D stacking technology still has many deficiencies, such as the interference between the external connection and the semiconductor device in the stacked chip, which is not conducive to the integration and improvement of the overall performance of the 3D integrated circuit.

Images