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Heat-conducting polyimide film with dimensional stability at high temperature and preparation method thereof

A polyimide film and dimensionally stable technology, which is applied in the field of high-temperature dimensionally stable thermally conductive polyimide film and its preparation, can solve the problems affecting the operation stability of electronic devices and circuits, affecting the dimensional stability of the polyimide film, The heat dissipation effect of the device is not ideal, so as to maintain the high temperature dimensional stability, reduce the temperature, and promote the effect of crosslinking

Active Publication Date: 2020-06-09
太湖方舟新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The accumulation of heat will seriously affect the stability of electronic devices and circuit operation, and even bring safety hazards
[0004] The thermal conductivity of polyimide film, which is conventionally used as an insulating substrate for electronic circuits, is generally lower than 0.2Wm -1 K -1 , the heat dissipation effect of the prepared device is not ideal, and the long-term high temperature state will also affect the dimensional stability of the polyimide film

Method used

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  • Heat-conducting polyimide film with dimensional stability at high temperature and preparation method thereof

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Embodiment 1

[0026] A method for preparing a high-temperature dimensionally stable thermally conductive polyimide film, comprising the following steps: adding a filler mixture to the N,N-dimethylacetamide solution of 4,4'-diaminodiphenyl ether in a nitrogen atmosphere Then add 3,3',4,4'-biphenyltetracarboxylic dianhydride, react at 40°C for 5h, then add tetrahydrofuran solution of octa(aminophenyltrioxysilane), continue to react for 1.5h, and then use N ,N-Dimethylacetamide adjusts the solid content to 25wt% to obtain the intermediate material; take the intermediate material for defoaming and coating on the surface of the substrate, dry at 110°C, then hold at 260°C for 30min, and then at 340°C for 20min Imidization, demolding to obtain a high-temperature dimensionally stable thermally conductive polyimide film, wherein the filler is 3-aminopropyltriethoxysilane modified nano boron nitride with a particle size of 20-25nm and a particle size of 10- 15nm 3-aminopropyltriethoxysilane modified ...

Embodiment 2

[0031] A method for preparing a high-temperature dimensionally stable heat-conducting polyimide film, comprising the following steps: in a nitrogen atmosphere, adding fillers to the N,N-dimethylacetamide solution of p-phenylenediamine and mixing, and then adding 3, 3',4,4'-Biphenyltetracarboxylic dianhydride, react at 60°C for 4h, then add octa(aminophenyltrioxysilane) tetrahydrofuran solution, continue to react for 1h, and then use N,N-Dimethylethane Amide adjusts the solid content to 15wt% to obtain the intermediate material; take the intermediate material for defoaming and coating on the surface of the substrate, dry it at 130°C, then keep it at 240°C for 50min, then keep it at 320°C for 40min for imidization, and remove the film to obtain High-temperature dimensionally stable thermally conductive polyimide film, wherein the filler is 3-aminopropyltriethoxysilane modified nano boron nitride with a particle size of 20-25nm and 3-aminopropyl triethoxysilane with a particle siz...

Embodiment 3

[0036] A method for preparing a high-temperature dimensionally stable heat-conducting polyimide film, comprising the following steps: in a nitrogen atmosphere, adding fillers to the N-methylpyrrolidone solution of 3,4'-diaminodiphenyl ether and mixing, and then adding 3,3',4,4'-biphenyltetracarboxylic dianhydride, react at 45°C for 4.8h, then add tetrahydrofuran solution of octa(aminophenyltrioxysilane), continue to react for 1.4h, then use N-methyl Pyrrolidone adjusts the solid content to 18wt% to obtain the intermediate material; take the intermediate material for defoaming and coating on the surface of the substrate, dry it at 125°C, then keep it at 245°C for 45min, then keep it at 325°C for 35min for imidization, and remove the film to obtain High-temperature dimensionally stable thermally conductive polyimide film, wherein the filler is 3-aminopropyltriethoxysilane modified nano boron nitride with a particle size of 20-25nm and 3-aminopropyl triethoxysilane with a particle...

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Abstract

The invention discloses a preparation method of a heat-conducting polyimide film with dimensional stability at high temperature. The preparation method comprises the following steps: in an inert gas atmosphere, adding a filler into an aromatic diamine solution, carrying out uniform mixing, then adding aromatic dianhydride, carrying out reacting, adding an octa(aminophenyltriethoxysilane) solution,and continuing reacting to obtain an intermediate material; and defoaming the intermediate material, coating the surface of a substrate with the defoamed intermediate material, and carrying out drying, imidization and demolding successively to obtain the heat-conducting polyimide film with dimensional stability at high temperature, wherein the filler is modified nanometer boron nitride and modified nanometer silicon dioxide. The invention also discloses the heat-conducting polyimide film with dimensional stability at high temperature. The heat-conducting polyimide film is prepared according to the preparation method. The heat-conducting polyimide film is good in thermal conductivity and stable in size at high temperature.

Description

technical field [0001] The invention relates to the technical field of polyimide films, in particular to a high-temperature dimensionally stable heat-conducting polyimide film and a preparation method thereof. Background technique [0002] Polyimide (PI) film has good properties such as high temperature resistance, high strength, and low dielectric, and is widely used in electronics and electrical insulation substrates. [0003] With the rapid development of electronic information technology, the size of electronic devices and integrated electrical appliances is constantly shrinking, and the operating speed is getting faster and faster, which emits a lot of heat. The accumulation of heat will seriously affect the stability of electronic devices and circuit operation, and even bring safety hazards. [0004] The thermal conductivity of polyimide film, which is conventionally used as an insulating substrate for electronic circuits, is generally lower than 0.2Wm -1 K -1 , the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J5/18C08G73/10C08K13/06C08K3/38C08K3/36C08K9/06C08L79/08
CPCC08J5/18C08G73/1071C08G73/106C08G73/1067C08G73/105C08K13/06C08K3/38C08K3/36C08K9/06C08J2379/08C08K2201/011C08K2003/385
Inventor 方晓栋宋丽英
Owner 太湖方舟新材料科技有限公司
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