P-type GaAs layer and epitaxial growth method thereof, GaAs solar cell and preparation method
A solar cell and epitaxial growth technology, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problem that it is difficult to effectively increase the doping concentration of the P-type layer, so as to improve the efficiency of P-type doping, reduce negative effects, and improve doping efficiency. The effect of impurity concentration
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[0037] Preferably, the above preparation method includes: sequentially setting a back field layer, a base layer, an emission layer, a window layer and a contact layer on the substrate from bottom to top, wherein the emission layer is formed by an epitaxial growth method.
[0038] In a preferred embodiment, the above preparation method includes: growing a back field layer on the substrate, preferably the back field layer is Al X1 Ga 1-X1 As or (Al Y1 Ga 1-Y1 ) Z1 In 1-Z1 P, wherein, 0≤x1≤0.5, 0≤y1≤0.5, 0.4≤z1≤0.6, the thickness of the back field layer is preferably 30-200nm, and the growth temperature of the back field layer is preferably 400-1000°C; in the back field layer The base layer is grown on top, preferably the base layer is GaAs or N-type doped GaAs, the preferred concentration of N-type doping is 0-1E22, the thickness of the base layer is preferably 500-5000nm, and the growth temperature of the base layer is preferably 400-1000°C; The growth method grows the emi...
Embodiment 1
[0047] MOCVD is used for the following processes:
[0048] Under the condition of growth temperature of 800°C, a uniform flow rate of trimethylgallium, arsine and carbon tetrabromide is passed into the reaction chamber to grow a thin layer of P-type GaAs with a thickness of 5nm;
[0049] Cut off carbon tetrabromide to maintain the flow of trimethylgallium and arsine, and at the same time, pass a small amount of trimethylindium into the reaction chamber, and grow InGaAs quantum dots at 800°C with a thickness of 4ML (monalyer: molecular monolayer) , quantum dot monolayer growth terminal, in AsH 3 The growth was interrupted for 30s under the protection of , so as to promote the migration of In atoms to the surface of quantum dots;
[0050] Then cut off the trimethyl indium, rapidly raise the temperature to 1000°C, bake at high temperature for 30s, and break the In-As bond to remove the residue of In in GaAs;
[0051] Continue to feed carbon tetrabromide and trimethylgallium for...
Embodiment 2
[0055] MOCVD is used for the following processes:
[0056] Under the condition of growth temperature of 800°C, a uniform flow rate of trimethylgallium, arsine and carbon tetrabromide is passed into the reaction chamber to grow a thin layer of P-type GaAs with a thickness of 5nm;
[0057] Cut off carbon tetrabromide to maintain the flow of trimethylgallium and arsine, and at the same time, pass a small amount of trimethylindium into the reaction chamber, and grow InGaAs quantum dots at 500°C with a thickness of 4ML (monalyer: molecular monolayer) , quantum dot monolayer growth terminal, in AsH 3 The growth was interrupted for 30s under the protection of , so as to promote the migration of In atoms to the surface of quantum dots;
[0058] Then cut off the trimethyl indium, rapidly raise the temperature to 1000°C, bake at high temperature for 30s, and break the In-As bond to remove the residue of In in GaAs;
[0059] Continue to feed carbon tetrabromide and trimethylgallium for...
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