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Double-carrier modulation method for suppressing low-frequency harmonic waves of high-switching-frequency silicon carbide inverter

A dual-carrier modulation and switching frequency technology, which is applied to output power conversion devices, AC power input conversion to DC power output, high-efficiency power electronic conversion, etc.

Active Publication Date: 2020-06-12
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But the higher the switching frequency, the more serious the low-frequency current harmonics caused by the dead zone

Method used

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  • Double-carrier modulation method for suppressing low-frequency harmonic waves of high-switching-frequency silicon carbide inverter
  • Double-carrier modulation method for suppressing low-frequency harmonic waves of high-switching-frequency silicon carbide inverter
  • Double-carrier modulation method for suppressing low-frequency harmonic waves of high-switching-frequency silicon carbide inverter

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Embodiment Construction

[0043] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention.

[0044] see figure 1 , in the high switching frequency SiC inverter main circuit topology, V dc and C dc are the DC bus voltage and DC bus capacitance of the high switching frequency SiC inverter, respectively; Q a + , Q a – , Q b + , Q b – , Q c + , Q c – are six silicon carbide power switching devices; S a + , S a – , S b + , S b – , S c + , S c – are the driving signals of six silicon carbide power switching devices; CS a 、CS b 、CS c is a three-phase current sensor, used to measure the three-phase output current i a i b i c ; L a , L b , L c is the three-phase filter inductor; R a , R b , R c is the three-phase load resist...

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Abstract

The invention discloses a low-frequency harmonic suppression modulation method of a high-switching-frequency silicon carbide inverter. A main circuit is connected with a dual-carrier modulation modulefor suppressing low-frequency harmonic waves and a current polarity extraction module; a three-phase output current in the main circuit is inputted to the current polarity extraction module, and a three-phase fundamental wave current is obtained; the three-phase fundamental wave current and a three-phase modulation wave are input into a double-carrier modulation module for suppressing low-frequency harmonic waves, and the module outputs driving signals of six silicon carbide power switching devices to a main circuit, so a control loop of the whole double-carrier modulation method for suppressing the low-frequency harmonic waves of the high-switching-frequency silicon carbide inverter is formed. A driving signal is obtained by comparing double carriers with a modulation wave; a driving vacant region is added between upper and lower tube driving signals, a dead zone is obtained without additionally adding a switch-on delay link, a control loop does not have a delay link caused by switch-on delay, the current polarity extraction module is added, the amplitude of double carriers is changed according to the current polarity, and the purpose of suppressing low-frequency harmonic waves of the high-switching-frequency silicon carbide inverter is achieved.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a dual-carrier modulation method for suppressing low-frequency harmonics of a silicon carbide inverter with high switching frequency. Background technique [0002] The switching frequency of the silicon carbide power switching device can be greater than 100kHz, which can further increase the power density of the inverter and reduce the overall volume of the inverter. If the traditional modulation method with dead zone is used, the output voltage will generate error voltage pulses related to the current direction, which will cause the output current to contain low-frequency current harmonics such as the 5th and 7th orders. In the traditional modulation method, a single carrier is generally used to compare the modulation wave to obtain the driving signal. In order to prevent the through-short circuit fault of the silicon carbide inverter, a dead zone is usually added bet...

Claims

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Application Information

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IPC IPC(8): H02M1/12H02M1/38H02M7/537
CPCH02M1/12H02M1/38H02M7/537Y02B70/10
Inventor 严庆增肖浪涛孙鹏霄赵仁德徐海亮
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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