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Doped cuprous oxide nano-material and preparation method and application thereof

A technology of cuprous oxide and nanomaterials, applied in the field of nanomaterials and photoelectric functional materials

Active Publication Date: 2020-06-19
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Is it possible to develop a general doping method, which is currently a question to be solved

Method used

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  • Doped cuprous oxide nano-material and preparation method and application thereof
  • Doped cuprous oxide nano-material and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Cuprous thiocyanate thin film can be prepared by reacting copper film with thiocyanate aqueous solution. [(1) Xu Wei, Xiao Xingxing, Xia Peng, A cuprous oxide nanowire porous film and its preparation method and application, invention patent application number: 2014100140030].

[0032] The cuprous thiocyanate film is immersed in the "zinc ion-thiocyanate" aqueous solution for adsorption, and then reacted with the alkali solution to prepare a zinc-doped cuprous oxide film:

[0033] Mix 5 ml of 0.5 mol / L sodium thiocyanate solution with 10 ml of 0.1 mol / L zinc sulfate aqueous solution, then immerse the cuprous thiocyanate film on the flexible plastic substrate, soak for 20 minutes, take it out, remove Excess solution; then immerse the film sample in excess sodium hydroxide aqueous solution, soak for 1 hour, take it out, wash, and dry to prepare a zinc-doped cuprous oxide film.

[0034] Scanning electron microscope images (SEM) show the Zn-doped cuprous oxide film as a nan...

Embodiment 2

[0039] Replace the "zinc ion-thiocyanate" aqueous solution with zinc sulfate aqueous solution.

[0040] The cuprous thiocyanate film is immersed in zinc sulfate aqueous solution for adsorption, and then reacted with alkali solution to prepare zinc-doped cuprous oxide film. The experimental steps are similar, but the aggregation form and photoluminescent properties of the products are significantly different.

[0041] SEM images such as figure 2 (A) and 2(B). The film can emit light under the excitation of green light (532 nm), but the luminous intensity is significantly reduced, and the emission wavelength also shifts, such as figure 2 (C) shown.

[0042] This example shows that in the process of preparing zinc-doped cuprous oxide film, the "zinc ion-thiocyanate" aqueous solution is very different from the general inorganic salt solution (such as zinc sulfate aqueous solution).

[0043] This example further proves that the "metal ion-thiocyanate" aqueous solution has unu...

Embodiment 3

[0045] The commercially available cuprous thiocyanate powder was ground into a very fine powder to replace the cuprous thiocyanate film in Example 1 to prepare zinc-doped cuprous oxide nanomaterials.

[0046] A zinc-doped cuprous oxide powder sample was obtained, which was similar to the product in Example 1 and had a nanowire structure.

[0047] Many kinds of zinc-doped cuprous oxide nanomaterials can be prepared by changing the experimental formula, including the amount of thiocyanate and the concentration of the solution.

[0048] This kind of zinc-doped cuprous oxide nanomaterials can be used as one of the three primary colors to construct white light-emitting devices (LEDs), which is a new type of phosphor. It can also be used as an antifouling coating additive.

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Abstract

The invention belongs to the technical field of nano-materials and photoelectric functional materials, and particularly relates to a doped cuprous oxide nano-material and a preparation method and application thereof. According to the preparation method, a metal ion-thiocyanate water solution is used as a doping solution to prepare the doped cuprous oxide nano material. The prepared doped cuprous oxide nano material is adjustable in form, can be in a nanowire form, and can also be not in a nanowire form. The prepared material sample can be a doped film or doped powder. The doped cuprous oxide nano material can emit high-brightness red light under the excitation of green light (532 nanometers), and can be used as one of three primary colors for constructing a white light emitting device (LED). The nano material synthesized by the method has an important value in the fields of functional materials and quantum information materials, and the product can also be used as a coating additive orused for preparing an antifouling coating. The preparation method provided by the invention is environment-friendly, simple and efficient, and is a new route for synthesizing the doped nano material.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials and photoelectric functional materials, and in particular relates to a doped cuprous oxide nanometer material and its preparation method and application. Background technique [0002] Metal oxide materials have a wide range of applications. The doping of metal oxides can further improve and enhance the performance and application fields of materials. As early as 1967, I. T. Drapak reported ZnO / p-Cu 2 Electroluminescence of O heterojunctions. However, the doping effect of P-type ZnO still has great room for improvement. [0003] Cuprous oxide has potential important value in the field of optoelectronic functional materials. The key issue at present is the preparation technology of high-performance materials, especially the effective doping method. Whether it is possible to develop a general doping method is an issue that needs to be solved at present. [0004] The inventors discove...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G3/02B82Y40/00B82Y20/00B01J23/80B01J23/75B01J23/755B01J23/72B01J37/02C09K11/58H01L33/50C09D5/16C23C18/12
CPCC01G3/02B82Y40/00B82Y20/00B01J23/80B01J23/75B01J23/755B01J23/72B01J37/0201B01J37/0236C09K11/584C09K11/602C09K11/605H01L33/502C09D5/1618C23C18/1216C23C18/1241C01P2004/16B01J35/40B01J35/59
Inventor 徐伟徐琳绮
Owner FUDAN UNIV
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