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Polymer-based dielectric materials and film capacitors

A technology of thin film capacitors and dielectric materials, applied in thin film/thick film capacitors, stacked capacitors, fixed capacitor dielectrics, etc., can solve problems such as complex process, high cost, and decreased breakdown strength of composites, and achieve low energy storage density , The effect of high electric field breakdown strength

Active Publication Date: 2022-02-22
SHENZHEN INST OF ADVANCED TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, although the dielectric constant of the BT / PVDF composite material has been improved, the improvement of the breakdown strength is limited, and even the breakdown strength of the composite is reduced. It has been improved, but its complicated process and high cost make it difficult to achieve large-scale production

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  • Polymer-based dielectric materials and film capacitors
  • Polymer-based dielectric materials and film capacitors

Examples

Experimental program
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Embodiment 1

[0045] The polymer-based dielectric material provided in this embodiment includes a polymer matrix made of polyvinylidene fluoride (hereinafter referred to as PVDF) and a dielectric filler ZnS uniformly filled inside the polymer matrix. 0.8 o 0.2 ; In other words, the chemical formula of the dielectric filler provided by the present embodiment is ZnS 1-i o i , where i=0.2. The dielectric filler is formed by replacing 20% ​​of the S atoms in the ZnS crystal with O atoms, and is a distorted ZnS unit cell structure.

[0046] Specifically, the amount of dielectric filler in the polymer-based dielectric material of this embodiment is 3.38 mg, 85.51 mg, 1.01 g, and 3.04 g; which correspond to volume additions of 0.1%, 2.53%, 30%, and 90%, respectively. .

[0047] The above dielectric filler ZnS 0.8 o 0.2 The specific preparation method is as follows: (1) Zinc acetate dihydrate, thioacetamide and sodium hydroxide are weighed according to the ratio of the amount of substances of...

Embodiment 2

[0051] In the description of Embodiment 2, the similarities with Embodiment 1 will not be repeated here, and only the differences with Embodiment 1 will be described. The difference between Example 2 and Example 1 is that in the polymer-based dielectric material in Example 2, the dielectric filler is ZnS 0.6 o 0.4 , and the dosages thereof are 3.26mg, 82.5mg, 0.98g, 2.94g; they correspond to volume additions of 0.1%, 2.53%, 30%, and 90%, respectively.

[0052] Correspondingly, in the preparation process of the dielectric filler, the zinc source zinc acetate dihydrate, the sulfur source thioacetamide and the oxygen source sodium hydroxide are respectively controlled to weigh according to the ratio of the amount of substances to 1:0.6:0.4; The rest are prepared with reference to the description in Example 1 to obtain powdery products.

[0053] XRD test was carried out to this powdery product, as figure 1 shown. From figure 1 It can be seen that compared with pure ZnS, no ne...

Embodiment 3

[0056] In the description of Embodiment 3, the similarities with Embodiment 1 will not be repeated here, and only the differences with Embodiment 1 will be described. The difference between Example 3 and Example 1 is that in the polymer-based dielectric material in Example 3, the dielectric filler is ZnS 0.99 o 0.01 , and the dosages thereof are 3.49mg, 88.3mg, 1.05g, 3.141g; they correspond to volume additions of 0.1%, 2.53%, 30%, and 90%, respectively.

[0057] Correspondingly, in the preparation process of the dielectric filler, the zinc source zinc acetate dihydrate, the sulfur source thioacetamide and the oxygen source sodium hydroxide are respectively controlled to weigh according to the ratio of the amount of substances to 1:0.99:0.01; The rest are prepared with reference to the description in Example 1 to obtain powdery products.

[0058] In this example, the same preparation method as in Example 1 was used to prepare ZnS with dielectric filler 0.99 o 0.01 film-lik...

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Abstract

The invention provides a polymer-based dielectric material, which includes a polymer matrix and a dielectric filler uniformly filled in the polymer matrix; wherein, the dielectric filler is a chemical formula X m Y n‑i Z i Inorganic compounds of the formula X having a stable crystal structure m Y n Inorganic compounds obtained through equal valence and heteroelectronegative substitution to form an isoelectron trap structure; where the ratio of m to n represents the simplest ratio of the valences of element Y and element X. The dielectric filler in the polymer-based dielectric material according to the present invention has isoelectronic defects, so that the polymer-based dielectric material has higher electric field breakdown strength and energy storage density, and lower dielectric loss. The invention also discloses a film capacitor using the above-mentioned polymer-based dielectric material as a dielectric layer material.

Description

technical field [0001] The invention belongs to the technical field of composite dielectric materials, and specifically relates to a polymer-based dielectric material and a film capacitor using the polymer-based dielectric material as a dielectric layer material. Background technique [0002] With the rapid development of the economy, the human demand for energy is increasing, and the requirements for energy storage and release methods are becoming more and more stringent; therefore, related energy storage technologies have received extensive attention and applications. Compared with other electronic energy storage devices, film capacitors have the characteristics of fast charge and discharge rates and high power density, but their energy storage density is far from ideal. Polymer-based composite film dielectric materials with high dielectric strength and high breakdown strength combine the advantages of inorganic fillers and polymers, and have the characteristics of high en...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08L27/16C08K3/30H01G4/33H01G4/18
CPCC08K3/30H01G4/33H01G4/18
Inventor 于淑会于均益孙蓉
Owner SHENZHEN INST OF ADVANCED TECH