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Gallium nitride Schottky barrier diode and manufacturing method thereof

A Schottky potential and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as insufficient stability and large reverse leakage current, and achieve high stability and reverse recovery speed High and stable performance

Pending Publication Date: 2022-04-12
江西誉鸿锦材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, Schottky barrier diodes manufactured by traditional technology have technical problems such as large reverse leakage current and insufficient stability.

Method used

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  • Gallium nitride Schottky barrier diode and manufacturing method thereof
  • Gallium nitride Schottky barrier diode and manufacturing method thereof

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Embodiment 1

[0041] Such as figure 1 As shown, this embodiment discloses a gallium nitride Schottky barrier diode with sapphire as a substrate, which is a multilayer structure, including a substrate (1), a buffer layer (2), i - GaN epitaxial layer (3a), n-GaN epitaxial layer (3b), said n-GaN epitaxial layer (3b) is provided with ohmic electrode (4) forming ohmic contact with it and forming Schottky barrier with it The Schottky barrier electrode (5) in contact, the Schottky barrier electrode (5) sequentially includes a nickel nitride layer and a gold layer from bottom to top, the nickel nitride layer and the n-GaN epitaxial layer (3b) constitutes a Schottky barrier contact.

[0042] The manufacturing method of the GaN Schottky barrier diode is as follows: each GaN epitaxial layer is grown on a sapphire substrate by MOCVD (metal organic chemical vapor phase epitaxy) method. The sapphire substrate is a C-plane sapphire with a thickness of 430 μm and an inclination of 0.15 degrees to the m-p...

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Abstract

The invention discloses a gallium nitride Schottky barrier diode which is of a multi-layer structure and sequentially comprises a substrate (1), a buffer layer (2), an i-GaN epitaxial layer (3a) and an n-GaN epitaxial layer (3b) from bottom to top, an ohmic electrode (4) and a Schottky barrier electrode (5) are arranged on the n-GaN epitaxial layer (3b), the ohmic electrode (4) and the n-GaN epitaxial layer (3b) are in ohmic contact, and the Schottky barrier electrode (5) and the n-GaN epitaxial layer (3b) are in Schottky barrier contact. Wherein the Schottky barrier electrode (5) sequentially comprises a nickel nitride layer and a gold layer from bottom to top, and the nickel nitride layer and the n-GaN epitaxial layer (3b) form Schottky barrier contact. And the nickel nitride layer is prepared by adopting a nitrogen ion auxiliary injection type electron beam nickel evaporation method. The Schottky barrier diode solves the technical problems that a traditional Schottky barrier diode is large in reverse leakage current and not good enough in stability.

Description

technical field [0001] The invention relates to the technical field of third-generation semiconductor materials and devices, in particular to a structure of a gallium nitride Schottky barrier diode and a manufacturing method thereof. Background technique [0002] Schottky barrier diodes (SBDs) are key devices in rectifier circuits and are widely used in AC-DC conversion, electric vehicle power charging, energy harvesting and other fields. Recently, with the development and popularization of microwave communication, devices are required to adapt to the working characteristics at high frequency, and have high stability and high conversion efficiency at high frequency and high voltage. Traditional GaAs-based and Si-based commercial Schottky barrier diodes are difficult to meet these new requirements. Gallium nitride (GaN)-based materials have the characteristics of high electron mobility, high electron saturation velocity, wide band gap, and high breakdown field. Therefore, SB...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/45H01L29/872H01L21/329H01L21/285
Inventor 邵春林闫怀宝闫发旺
Owner 江西誉鸿锦材料科技有限公司