Two-dimensional material transferring and assembling system and method
A technology of two-dimensional materials and assembly systems, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of complex relationship between components, low degree of freedom of mechanical operation, high cost, etc., to achieve optimized structure and low construction cost , the effect of high integration
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Embodiment 1
[0046] Step 1, using a metal hard mask, in 285nm SiO 2 A metal electrode with chromium (5nm) / gold (30nm) symmetrical structure was prepared by thermal evaporation on the / Si surface, and the channel distance between the electrodes was 30 μm.
[0047] Step 2: Select an indium selenide bulk material with good crystal quality and bright surface, and use SPV 224 Nitto adhesive tape to stick an indium selenide sheet with a thickness of about 1-3 microns on the surface of the bulk indium selenide material. The Nitto tape with the indium selenide flakes is bonded and separated several times until the indium selenide flakes with a thickness of about 1-100 nanometers are densely distributed on the surface of the tape. When bonding and separating, in order to protect the flat surface of the indium selenide body material, the surface of the indium selenide should be in full contact with the surface of the tape during bonding. When separating, proceed slowly in one direction.
[0048] S...
Embodiment 2
[0055] Step 1. Using the mechanical peeling method described in Step 2 to Step 7 in Example 1 and its transfer operation, prepare a two-dimensional hexagonal boron nitride sheet with a uniform size of about 100 μm*200 μm in thickness, and then use the method mentioned in the present invention Two-dimensional material transfer assembly system, transfer it to 285nm SiO with special positioning pattern 2 / Si substrate surface, used as bottom hexagonal boron nitride.
[0056] Step 2. Repeat the operations from step 2 to step 7 in Example 1 to prepare a two-dimensional indium selenide sheet with a side length of about 50 μm and a uniform thickness in the shape of an equilateral triangle, and then use the two-dimensional material transfer assembly system mentioned in the present invention, It is transfer bonded to the bottom hexagonal boron nitride surface. When transferring, it should be ensured that the two-dimensional indium selenide sheet is completely attached to the surface o...
Embodiment 3
[0060] Step 1, using a metal hard mask, in 285nm SiO 2 / Si surface thermal evaporation prepares a chromium (5nm) / gold (30nm) symmetrical structure metal electrode, and the channel distance between the electrodes is 10 μm.
[0061] Step 2. Using the mechanical peeling method described in Step 2 to Step 7 in Example 1 and its transfer operation, prepare a hexagonal boron nitride sheet with a size of about 50 μm*130 μm and a uniform thickness, using the two-dimensional material mentioned in the present invention Transfer the assembly system, adjust the length direction of the hexagonal boron nitride to be the same as the direction of the electrode channel, and transfer it and completely fit it on the electrode channel.
[0062] Step 3. Repeat the operations from step 2 to step 7 in Example 1 to prepare a two-dimensional indium selenide sheet with a uniform thickness of about 50 μm*100 μm, and then use the two-dimensional material transfer assembly system mentioned in the present ...
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