OLED device and preparation method thereof
A device and electrode technology, applied in the field of OLED devices and its preparation, can solve the problems of large waste of materials, high energy consumption, and high cost, and achieve the effects of improving luminous efficiency and reducing costs
Inactive Publication Date: 2020-06-19
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
View PDF7 Cites 4 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] In order to solve the above-mentioned technical problems, the present invention provides an OLED device and a preparation method thereof, which are used to solve the technical problems of high cost in the prior art due to the complex process of preparing the light-emitting structure layer, high energy consumption, and large waste of materials.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment
[0032] Such as figure 1 As shown, in this embodiment, the OLED device 10 of the present invention includes a first electrode 110 , an electron injection layer 140 , a light emitting structure layer 120 , a charge generation layer 130 and a second electrode 150 .
[0033] The first electrode 110 is an anode, and its material is indium tin oxide.
[0034] The light emitting structure layer 120 includes a first light emitting structure layer 1201 and a second light emitting structure layer 1202 .
[0035] Both the first light emitting structure layer 1201 and the second light emitting structure layer 1202 include a hole injection layer 121 , a hole transport layer 122 , a light emitting layer 123 and an electron transport layer 124 .
[0036] The thickness of the hole injection layer 121 is 20nm-200nm, and the material is a polymer material, such as poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4'-(N -(4-sec-butylphenyl)diphenylamine)](TFB) or small molecule cross-linked hole injec...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses an OLED device and a preparation method thereof. The OLED device comprises: a first electrode and a second electrode; an electron injection layer which is arranged on one side,facing the first electrode, of the second electrode; at least two groups of light-emitting structure layers which are laminated between the first electrode and the electron injection layer; and a charge generation layer which is arranged between the two adjacent groups of light-emitting structure layers. The OLED device and the preparation method thereof have the beneficial effects that the charge generation layer is added in the two light-emitting structure layers, the charge generation layer transmits electrons to one side of the electron transmission layer and transmits holes to one side of the hole transmission layer, the light emitting efficiency of the OLED device is improved, and meanwhile, the light emitting structure layer and the charge generation layer are prepared by adoptingan ink-jet printing method, so that the cost is greatly reduced.
Description
technical field [0001] The invention relates to the field of OLEDs, in particular to an OLED device and a preparation method thereof. Background technique [0002] Due to the advantages of high contrast, large viewing angle, fast response speed, thinness, and flexibility, OLEDs have been widely used in flat panel display devices. At present, small-size OLED products adopt vacuum evaporation and fine mask technology to realize RGB three-color display, which has become mature. However, large-size OLED products have been abandoned due to the serious warping and deformation of the reticle after the size becomes larger, which increases the difficulty of alignment, resulting in a very low yield. At present, large-size color display is generally realized through white light and color filter technology. However, vacuum evaporation white light adopts a multi-layer structure, which faces disadvantages such as complex equipment and process, high energy consumption, large waste of mat...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K71/135H10K50/13H10K50/14H10K71/00
Inventor 王士攀
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD