Composite proton conductive ceramic electrolyte film as well as preparation method and application thereof
A ceramic electrolyte, proton conduction technology, applied in circuits, fuel cells, electrical components, etc., can solve the problem of difficulty in preparing high-performance proton conductive ceramic electrolyte films, and achieve high density, excellent hydrogen barrier properties, and controllable thickness. Effect
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Embodiment 1
[0027] (1) ZrO with a length of 60mm, an outer diameter of 15mm and a wall thickness of 2mm 2 Ultrasonic cleaning of ceramic tube surface for 15 minutes, drying;
[0028] (2) Preparation of SrCe on the surface of ceramic tubes by metal-organic chemical vapor deposition technology 1-x Yb x o 3-α thin film, the specific process parameters are: the reaction source is cerium acetylacetonate, strontium acetylacetonate, and ytterbium acetylacetonate, and the temperature of the reaction source is 350°C; H 2 The carrier gas flow rate is 200mL / min.
[0029] (3) Using metal organic chemical vapor deposition technology on SrCe 1-x Yb x o 3-α Preparation of SrCe on thin film surface 1-x Er x o 3-α thin film, the specific process parameters are: the reaction source is cerium acetylacetonate, strontium acetylacetonate, and erbium acetylacetonate, and the temperature of the reaction source is 200 ° C; H 2 The carrier gas flow rate is 100mL / min.
[0030] (4) according to the proces...
Embodiment 2
[0034] (1) ZrO with a length of 60mm, an outer diameter of 15mm and a wall thickness of 2mm 2 Ultrasonic cleaning of ceramic tube surface for 15 minutes, drying;
[0035] (2) Preparation of SrCe on the surface of ceramic tubes by metal-organic chemical vapor deposition technology 1-x Yb x o 3-αthin film; the specific process parameters are: the reaction source is cerium acetylacetonate, strontium acetylacetonate, and ytterbium acetylacetonate, and the temperature of the reaction source is 280°C; H 2 The carrier gas flow rate is 200mL / min.
[0036] (3) Using metal organic chemical vapor deposition technology on SrCe 1-x Yb x o 3-α Preparation of SrCe on thin film surface 1-x Er x o 3-α thin film, the specific process parameters are: cerium acetylacetonate, strontium acetylacetonate, erbium acetylacetonate, reaction source temperature 220 ° C; H 2 The carrier gas flow rate is 150mL / min.
[0037] (4) according to the process of step (2) in SrCe 1-x Er x o 3-α Prepar...
Embodiment 3
[0041] (1) ZrO with a length of 60mm, an outer diameter of 15mm and a wall thickness of 2mm 2 Ultrasonic cleaning of ceramic tube surface for 15 minutes, drying;
[0042] (2) Preparation of SrCe on the surface of ceramic tubes by metal-organic chemical vapor deposition technology 1-x Yb x o 3-α thin film; the specific process parameters are: the reaction source is cerium acetylacetonate, strontium acetylacetonate, and ytterbium acetylacetonate, and the temperature of the reaction source is 400°C; H 2 The carrier gas flow rate is 300mL / min.
[0043] (3) Using metal organic chemical vapor deposition technology on SrCe 1-x Yb x o 3-α Preparation of SrCe on thin film surface 1-x Er x o 3-α thin film, the specific process parameters are: cerium acetylacetonate, strontium acetylacetonate, erbium acetylacetonate, reaction source temperature 260 ° C; H 2 The carrier gas flow rate is 80mL / min.
[0044] (4) according to the process of step (2) in SrCe 1-x Er x o 3-α Prepar...
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