Method for surface treatment of high-purity copper rotary target material

A surface treatment and rotating target technology, applied in the field of surface treatment, can solve the problems of low adhesion strength between copper and organic dielectric materials, large thin-film targets, low resistivity, etc., and improve coating quality, target yield, and surface roughness The uniformity of the degree and the effect of improving the adsorption capacity

Pending Publication Date: 2020-06-26
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the purity of the film has a great relationship with the purity of the target. In the past, the copper target with a purity of 99.995% may be able to meet the needs of semiconductor manufacturers for the 0.35μm process, but it cannot meet the current 0.25μm process requirements, and the future 0.18μm process Even in the 0.13μm process, the required target purity will be required to reach 5N or even above 6N
Compared with aluminum, copper has higher electromigration resistance and lower resistivity, which can meet! The need for sub-micron wiring below 0.25 μm in the conductor process has brought other problems: the adhesion strength between copper and organic dielectric materials is low, and it is easy to react, causing the copper interconnection of the chip to be corroded during use. open circuit
However, there is no focus on the non-sputtering surface treatment at both ends of the target that affects the sputtering quality

Method used

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  • Method for surface treatment of high-purity copper rotary target material

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] This embodiment provides a method for surface treatment of a high-purity copper rotating target. The sandblasting position in the method is as follows: figure 1As shown, the method includes: performing a shielding treatment on the high-purity copper rotating target, and performing sandblasting after the shielding treatment is completed;

[0033] Wherein, the masking process is to use adhesive tape to shield the sputtering surfaces and sides of the target at both ends; the adhesive tape in the masking process includes insulating and heat-resistant tape; the operating pressure in the sandblasting is 3MPa; The sand grains used in the sandblasting are white corundum; the grain size of the sand grains used in the sandblasting is 0.35mm; the distance between the sandblasting gun head and the surface of the target material in the sandblasting is 15mm; the sandblasting is performed twice.

[0034] After the sandblasting is completed, the roughness test of the sandblasting surfa...

Embodiment 2

[0036] This embodiment provides a method for surface treatment of a high-purity copper rotating target, the method comprising: performing shielding treatment on the high-purity copper rotating target, and performing sandblasting after the shielding treatment is completed;

[0037] Wherein, the masking process is to use adhesive tape to shield the sputtering surfaces and sides of the target at both ends; the adhesive tape in the masking process includes insulating and heat-resistant tape; the operating pressure in the sandblasting is 4MPa; The sand grains used in the sandblasting are white corundum; the grain size of the sand grains used in the sandblasting is 0.4mm; the distance between the sandblasting gun head and the target surface in the sandblasting is 20mm; the sandblasting is carried out 3 times.

[0038] After sandblasting, the roughness test of the sandblasting surface was carried out, and the measured roughness Rz was 45-55 μm. The adsorption capacity of back-sputtere...

Embodiment 3

[0040] This embodiment provides a method for surface treatment of a high-purity copper rotating target, the method comprising: performing shielding treatment on the high-purity copper rotating target, and performing sandblasting after the shielding treatment is completed;

[0041] Wherein, the masking process is to use adhesive tape to shield the sputtering surfaces and sides of the two ends of the target; the adhesive tape in the masking process includes insulating and heat-resistant tape; the working pressure in the sandblasting is 5MPa; The sand grains used in the sandblasting are white corundum; the grain size of the sand grains used in the sandblasting is 0.45mm; the distance between the sandblasting gun head and the target surface in the sandblasting is 25mm; the sandblasting is performed twice.

[0042] After sandblasting, the roughness of the sandblasting surface was tested, and the measured roughness was 45-55μm. The adsorption capacity of back-sputtered objects was si...

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Abstract

The invention relates to a method for surface treatment of a high-purity copper rotary target material. The method comprises the steps that the high-purity copper rotary target material is subjected to shielding treatment, and sand blasting is conducted after shielding treatment is completed, wherein the roughness of the surface of the target material obtained after sand blasting is completed is Rz 35-65 microns, and according to shielding treatment, adhesive tape is adopted for shielding the sputtering faces and the side edges of the two ends of the high-purity copper rotary target material.After the surfaces of the two ends of the rotary target material treated through the method are subjected to sand blasting, the color and luster are consistent, the surface roughness is uniform and improved, impurities such as stains are avoided, the adsorption capacity to anti-sputtering objects in the target material sputtering process is improved, the target material coating quality is improved, and the yield is increased.

Description

technical field [0001] The invention relates to the field of surface treatment, in particular to a method for surface treatment of a high-purity copper rotating target. Background technique [0002] At present, high-purity copper (≥3N) rotating targets are mostly used in coating fields such as liquid crystal displays and solar panels. Compared with traditional planar targets, the utilization rate of rotating targets can reach 80% and the coating quality is significantly better than that of planar targets. Material; Copper rotating target At present, the domestic production of high-purity copper rotating target is in its infancy, but there is basically no development of G8.5 generation line copper rotating target with more complex structure and higher technical difficulty. [0003] Rotating targets are magnetron targets. The target is made into a cylindrical shape with a stationary magnet inside, which rotates at a slow speed. It mainly includes zinc-tin alloy, zinc-aluminu...

Claims

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Application Information

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IPC IPC(8): B24C1/06B24C9/00B24C11/00
CPCB24C1/06B24C9/00B24C11/00
Inventor 姚力军潘杰边逸军王学泽祝龙飞
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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