Chemical mechanical polishing solution and application thereof

Abstract

The invention provides a chemical mechanical polishing solution. The chemical mechanical polishing solution comprises silicon dioxide grinding particles, a corrosion inhibitor, a complexing agent, anoxidizing agent and a phosphate surfactant. Compared with the prior art, the polishing solution has the advantages that the polishing solution is high in copper polishing rate and low in tantalum polishing rate, so that the copper / tantalum polishing rate selection ratio is high, and dish-shaped recesses and dielectric layer erosion of polished copper wires can be improved.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing, in particular to a chemical mechanical polishing liquid and its application. Background technique [0002] With the development of semiconductor technology and the miniaturization of electronic components, copper, as a material with good conductivity, is widely used in electronic component circuits. Due to the small resistance of copper, the transmission speed of signals between transistors in the circuit can be accelerated, and it can also provide smaller parasitic capacitance capability and smaller electromigration sensitivity. These electrical advantages make copper have good development prospects in the development of semiconductor technology. [0003] However, it is found in the copper integrated circuit manufacturing process that copper will migrate or diffuse into the transistor area of ​​the integrated circuit, thereby adversely affecting the performance of the semiconductor ...

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Problems solved by technology

However, existing polishing fluids cannot meet the above requirements at the same time.

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