Microwave drying device with power self-adaptive adjustment

Abstract

The invention provides a microwave drying device with power self-adaptive adjustment. The microwave drying device comprises a cavity, a slide holder and a microwave coupling matcher are arranged in the cavity, the microwave coupling matcher is connected with a microwave power source through a microwave transmission wire, and the microwave coupling matcher comprises a microwave antenna, an impedance matching network and a microwave detector; the microwave detector is used for detecting incident power and reflected power of a microwave power signal output to the microwave coupling matcher by themicrowave power source, the impedance matching network is automatically adjusted according to the conditions of the incident power and the reflected power until the microwave antenna can completely apply the output power of the microwave power source into the cavity; and an opening is formed in the cavity and connected with an external vacuum pump set through a conduit. The microwave drying device with the power self-adaptive adjustment function can effectively remove moisture on a wafer, so that a nano-pattern structure is solidified, and collapse of the structure cannot be caused in the drying process.

Description

technical field [0001] The invention relates to the technical field of drying devices, in particular to a microwave drying device with self-adaptive power adjustment for curing nano-pattern structures on wafers. Background technique [0002] Modern integrated circuit technology continues to develop towards smaller feature sizes and larger wafer sizes, such as feature sizes entering 10 nanometers and wafer diameters larger than 12 inches, which poses greater challenges to the manufacturing process of microelectronic devices. Because in the manufacturing process of microelectronic devices, with the further reduction of the feature size and the further improvement of the structure complexity, the collapse of the nano-pattern structure on the wafer has become an increasingly serious problem. There are many reasons for the structure to collapse, such as being subjected to external forces, the stress of the structure itself, weaker structural materials, and surface tension during ...

AI Technical Summary

Problems solved by technology

[0003] Traditional drying devices, such as centrifugal dryers, use centrifugal force to shake water out of the wafer to achieve drying. This method is effective for macroscopic structures, but it is difficult to completely remove the attached water in nano-patterned structures.

[0004] Another example is the nitrogen gun, which uses the ejected nitrogen to purge the structure on the wafer. This method is effective for the wide and shallow groove structure, but it is basically ineffective for the photoresist deep groove with high aspect ratio, and it is even possible These structures were blown down due to excessive blowing force

[0005] In addition, there are some composite drying devices, which add high-temperature drying modules on the basis of the above-mentioned devices, and use baking to dry. However, because the above-mentioned devices cannot completely remove moisture, during the baking process, due to the adhesion of The surface tension of the water in the graphic structure will inevitably cause the nano-pattern to collapse from the inside, causing the entire wafer to be scrapped and the loss is great

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