Single crystal wafer cleaning method

Abstract

The invention provides a single crystal wafer cleaning method, which comprises the steps of (1) spraying deionized water or an organic solvent to the surface of a rotating wafer so as to pre-wet the surface of the wafer; (2) spraying a cleaning solution to the surface of the rotating wafer to remove various pollutants such as particles, organic matters and metal impurities; (3) spraying deionizedwater to the surface of the rotating wafer so as to rinse the surface of the wafer; and (4) spraying high-purity nitrogen to the surface of the rotating wafer so as to dry the surface of the wafer. According to the single crystal wafer cleaning method capable of reducing particle pollution, pre-infiltration of deionized water or an organic solvent is added before cleaning of the cleaning solution,the wettability of the cleaning solution and the surface of the wafer is improved, and the flow velocity of high-purity nitrogen sprayed out during rotary drying is controlled to reduce the negativepressure effect of a central area of the wafer, so that the adsorption of particle pollutants on the surface of the wafer is reduced, and the yield and the reliability of products are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor cleaning, in particular to a method for cleaning a single wafer. Background technique [0002] Wet cleaning is one of the key processes in the manufacturing process of integrated circuits. It is mainly used to remove various pollutants that contaminate the surface of the wafer during the manufacturing process of integrated circuits, including particle pollution, organic pollution, metal pollution, native oxides, etc. Wet cleaning mainly removes these pollutants through various physical and chemical reactions between liquid chemicals and the wafer surface. After the chemical reaction, it is necessary to rinse the wafer with deionized water, and finally dry the rinsed wafer. [0003] Traditional wet cleaning uses batch tank equipment, which is usually configured with one or more chemical tanks, each chemical tank is followed by one or more deionized water rinse tanks, and one or more drying t...

AI Technical Summary

Problems solved by technology

[0007] Therefore, there is an urgent need to develop a single wafer cleaning method that reduces particle contamination, to solve the problem of particle contamination adsorption on the wafer surface due to poor wettability of chemicals on the wafer surface, and high-purity nitrogen gas spraying to form a negative pressure zone that causes serious particle contamination adsorption. technical problems, improve product yield and reliability

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