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Hardmask composition hardmask layer and method of forming patterns

A technology of hard mask layer and composition, which is applied in the direction of photolithography, coating, and photosensitive materials used in optomechanical equipment on the pattern surface, and can solve the problem that it is difficult to provide fine patterns

Active Publication Date: 2020-07-07
SAMSUNG SDI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Today, depending on the small size of the pattern to be formed, it is difficult to provide fine patterns with excellent contours only by the above-mentioned typical photolithography techniques

Method used

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  • Hardmask composition hardmask layer and method of forming patterns
  • Hardmask composition hardmask layer and method of forming patterns
  • Hardmask composition hardmask layer and method of forming patterns

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0152] Put 1,6-dihydroxypyrene (23 g, 0.1 mole), 1-hydroxypyrene-6-carbaldehyde (24 g, 0.1 mole) and p-toluene sulfonic acid (pTSA, 1 g) into In a 1-liter 2-neck round bottom flask equipped with a mechanical stirrer and a condenser, 112 g of propylene glycol monomethylether acetate (PGMEA) was added thereto, and the mixture was stirred at 110° C. for 12 hours to carry out the polymerization reaction. When the polymerization reaction was completed, water was added thereto to remove salt, and the reactant was concentrated with an evaporator. The concentrated reactant was diluted with 15% by weight of cyclohexanone based on the amount of the entire melt, and a solid generated by adding hexane thereto was filtered to obtain a polymer represented by Chemical Formula 1a.

[0153] [chemical formula 1a]

[0154]

Synthetic example 2

[0156] A polymer represented by Chemical Formula 1b was prepared according to the same method as in Synthesis Example 1, except that pyreneformaldehyde (23 g, 0.1 mol) was used instead of 1-hydroxypyrene-6-carbaldehyde (24 g, 0.1 mol).

[0157] [chemical formula 1b]

[0158]

Synthetic example 1

[0160] Except that pyrene (20 g, 0.1 mol) was used instead of 1,6-dihydroxypyrene (23 g, 0.1 mol) and pyreneformaldehyde (23 g, 0.1 mol), the polymer represented by Chemical Formula A was prepared according to the same method as in Synthesis Example 1.

[0161] [chemical formula A]

[0162]

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Abstract

The invention discloses a hardmask composition, a hardmask layer and a method of forming patterns. The hard mask composition includes a polymer and a solvent, and the polymer includes a structural unit represented by Chemical Formula 1. In Chemical Formula 1, the definitions of A and B are the same as those described in the detailed description. [Chemical formula 1].

Description

[0001] Cross References to Related Applications [0002] This application claims priority and benefit from Korean Patent Application No. 10-2018-0169795 filed with the Korean Intellectual Property Office on December 26, 2018, the entire contents of which are incorporated herein by reference. technical field [0003] A hard mask composition, a hard mask layer including a cured product of the hard mask composition, and a method of forming a pattern using the hard mask composition are disclosed. Background technique [0004] Recently, the semiconductor industry has advanced to ultra-fine technology with patterns ranging in size from several nanometers to tens of nanometers in size. This ultra-fine technology mainly requires efficient photolithography. [0005] Typical photolithography techniques include: providing a material layer on a semiconductor substrate; coating a photoresist layer on the material layer; exposing and developing the photoresist layer to provide a photores...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027G03F7/09
CPCH01L21/0271H01L21/0274G03F7/09G03F7/094C09D161/12H01L21/02118H01L21/324C08L65/00G03F7/11G03F7/30G03F7/20G03F7/162
Inventor 金昇炫朴裕信朴亨锡金瑆焕郑铉日
Owner SAMSUNG SDI CO LTD
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