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Preparation method of quantum dot light-emitting diode

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of containing impurities, affecting the luminous efficiency and service life of quantum dot light-emitting diodes, etc.

Active Publication Date: 2020-07-07
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing a quantum dot light-emitting diode, aiming to solve the problem that the electron transport layer in the quantum dot light-emitting diode contains impurities that affect the luminous efficiency and service life of the quantum dot light-emitting diode

Method used

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  • Preparation method of quantum dot light-emitting diode
  • Preparation method of quantum dot light-emitting diode
  • Preparation method of quantum dot light-emitting diode

Examples

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preparation example Construction

[0015] Such as figure 1 Shown, a kind of preparation method of quantum dot light-emitting diode, comprises the following steps:

[0016] S01. Provide a substrate provided with an electron transport layer, the substrate provided with an electron transport layer comprising: an anode substrate, a quantum dot light-emitting layer disposed on the anode substrate, and a quantum dot light-emitting layer disposed on the an electron transport layer on the anode substrate side; or,

[0017] A substrate provided with an electron transport layer is provided, and the substrate provided with an electron transport layer includes: a cathode substrate, and an electron transport layer disposed on the cathode substrate;

[0018] S02. Deposit a solution on the surface of the electron transport layer, let it stand until the electron transport layer is soaked by the solution, and then perform drying treatment. The solution includes a main solvent and a solute dissolved in the main solvent, and the...

Embodiment 1

[0053] A method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0054] A glass substrate provided with an anode (ITO) is provided, a hole injection layer (PEDOT:PSS) is prepared on the anode, a hole transport layer (TFB) is prepared on the side of the hole injection layer away from the anode, and a hole transport layer (TFB) is prepared on the hole transport layer Prepare the quantum dot light-emitting layer (CdSe / ZnS QDs) on the side away from the anode; prepare the electron transport layer (ZnO) on the side of the quantum dot light-emitting layer away from the anode;

[0055] Depositing a heptane solution with a poly-1-butanethiol content of 100 ppm and a triethanolamine content of 1000 ppm on the surface of the electron transport layer, and vacuuming to remove residual solution components after standing at room temperature for 20 minutes;

[0056] An electron injection layer (LiF) is prepared on the surface of the electron transport layer...

Embodiment 2

[0058] A preparation method of a quantum dot light-emitting diode, the difference from Example 1 is: depositing a heptane solution with a poly-1-butanethiol content of 500 ppm and a triethanolamine content of 5000 ppm on the surface of the electron transport layer, and statically After standing for 20 minutes, vacuum was applied to remove residual solution components.

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Abstract

The invention provides a preparation method of a quantum dot light emitting diode. The preparation method comprises the following steps: providing a substrate provided with an electron transport layer; depositing a solution on the surface of the electron transport layer, and carrying out standing treatment until the electron transport layer is infiltrated, and drying the substrate, the solution comprising a main solvent and a solute dissolved in the main solvent, the polarity of the solute being greater than the polarity of the main solvent, and the solution not dissolving an electron transport material in the electron transport layer; and preparing other film layers on the electron transport layer treated by the mixed solvent, and preparing a quantum dot light-emitting diode, wherein thequantum dot light-emitting diode at least comprises the following structures: an anode and a cathode which are oppositely arranged, a quantum dot light-emitting layer arranged between the anode and the cathode, and an electron transport layer arranged between the quantum dot light-emitting layer and the cathode.

Description

technical field [0001] The invention belongs to the field of display technology, in particular to a preparation method of a quantum dot light-emitting diode. Background technique [0002] Quantum dots, also known as semiconductor nanocrystals, have three-dimensional dimensions in the nanometer range (1-100nm), and are a kind of nanoparticle theory between bulk materials and molecules. Quantum dots have excellent optical properties such as high quantum yield, large molar extinction coefficient, good photostability, narrow half-peak width, wide excitation spectrum and controllable emission spectrum, and are very suitable as light-emitting materials for light-emitting devices. In recent years, quantum dot fluorescent materials are widely used in the field of flat-panel displays due to their advantages of high light color purity, adjustable luminous color, and long service life, and have become a promising next-generation display and solid-state lighting source. Quantum Dot Lig...

Claims

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Application Information

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IPC IPC(8): H01L51/56H01L51/50
CPCH10K50/115H10K71/00H10K50/16H10K71/311H10K85/60
Inventor 张节向超宇
Owner TCL CORPORATION
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