Method for preparing cubic silicon carbide crystals and device thereof

A cubic silicon carbide, silicon carbide technology, applied in chemical instruments and methods, crystal growth, single crystal growth and other directions, can solve problems such as the inability to effectively prepare cubic silicon carbide, achieve stable preparation, maintain growth rate, and increase crystal growth. The effect of growing space

Inactive Publication Date: 2020-07-10
江苏超芯星半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Since the traditional growth method of hexagonal silicon carbide cannot effectively prepare

Method used

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  • Method for preparing cubic silicon carbide crystals and device thereof
  • Method for preparing cubic silicon carbide crystals and device thereof
  • Method for preparing cubic silicon carbide crystals and device thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Embodiment 1 provides a method for preparing cubic silicon carbide crystals, placing silicon carbide powder 2 and seed crystal 3 in a closed graphite crucible 1, wherein the seed crystal 3 is placed at the top center of the graphite crucible 1 , the silicon carbide powder 2 is placed outside the seed crystal 3, and a graphite ring is used to isolate the silicon carbide powder 2 from the seed crystal 3, and the growth temperature of 1800°C and the growth pressure of 1500Pa are used to sublimate the silicon carbide powder 2 to the surface of the seed crystal 3, and cooling and crystallizing on the seed crystal 3 to grow cubic silicon carbide crystals.

[0036] Wherein, the graphite ring is composed of porous graphite at the upper end and dense graphite 5 at the lower end, and the vertical distance between the lower surface of the seed crystal and the top of the dense graphite is 1 mm.

Embodiment 2

[0038] The process of embodiment 2 is basically the same as that of embodiment 1, except that the vertical distance between the lower surface of the seed crystal and the top of the dense graphite in embodiment 2 is 5 mm.

Embodiment 3

[0040] The process of embodiment 3 is basically the same as that of embodiment 1, except that the vertical distance between the lower surface of the seed crystal and the top of the dense graphite in embodiment 3 is 10 mm.

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Abstract

The invention belongs to the technical field of crystal growth, and provides a method for preparing cubic silicon carbide crystals. The method comprises the following steps: silicon carbide powder andseed crystals are put into a closed graphite crucible; wherein the seed crystal is arranged in the center of the top of the graphite crucible, the silicon carbide powder is arranged on the outer sideof the seed crystal, the silicon carbide powder is isolated from the seed crystal by adopting a graphite ring, the silicon carbide powder is sublimated to the surface of the seed crystal, and coolingcrystallization is performed on the seed crystal to grow cubic silicon carbide crystals. According to the method for preparing the cubic silicon carbide crystal, traditional high-temperature and low-pressure growth conditions are avoided, the crystal growth space is greatly increased through an innovative vertical charging mode compared with a traditional method, and therefore the high-quality cubic silicon carbide crystal can be stably prepared under the low-temperature and high-pressure conditions.

Description

technical field [0001] The invention relates to the technical field of crystal growth, in particular to a method and device for preparing cubic silicon carbide crystals. Background technique [0002] Silicon carbide single crystal has unique properties such as large band gap, high breakdown electric field, large thermal conductivity, small dielectric constant, and stable physical and chemical properties. It is considered to be ideal for manufacturing high-temperature, high-voltage, high-frequency high-power devices, etc. Semiconductor material. [0003] Silicon carbide (SiC) has more than 250 isomers. But among all the isomers of silicon carbide, only one belongs to the cubic crystal system, that is, the zinc blende type 3C-SiC with a crystal structure similar to gallium arsenide. All other isomers belong to the hexagonal crystal system, and their crystal structures are either Hexagonal or Rhombohedral, represented by numbers plus letters H and R, such as 4H-SiC, 15R-SiC,...

Claims

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Application Information

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IPC IPC(8): C30B23/00C30B29/36C30B29/66
CPCC30B23/00C30B29/36C30B29/66
Inventor 刘欣宇袁振洲
Owner 江苏超芯星半导体有限公司
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