Method for testing contact resistivity of passivated contact structure

A technology of contact resistivity and contact structure, which is applied in the field of solar cells, can solve the problems of complex photolithography mask process and RIE process, difficulty in mass production, and long time consumption, and achieve simple preparation process, good accuracy, short time effect
CN111403306AActive Publication Date: 2020-07-10TAIZHOU ZHONGLAI PHOTOELECTRIC TECH CO LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
TAIZHOU ZHONGLAI PHOTOELECTRIC TECH CO LTD
Publication Date
2020-07-10

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Abstract

The invention relates to a method for testing the contact resistivity of a passivation contact structure, and the method comprises the steps: (1) carrying out the grooving on the passivation contact structure close to two sides of an auxiliary grid line along a direction, parallel to the auxiliary grid line, of a cell piece, and forming a groove structure, wherein the groove structure longitudinally extends into the silicon substrate; (2) cutting the area containing the groove structure along the direction parallel to the main grid line on the battery piece to obtain a test sample, wherein thetest sample does not contain a main grid line; (3) testing resistance values corresponding to different auxiliary grid line intervals on the test sample; (4) drawing a scatter diagram by taking the distance between the auxiliary grid lines as an abscissa and the resistance value corresponding to the distance between the auxiliary grid lines as an ordinate, and performing linear fitting to obtainthe slope and intercept of a linear function; and calculating the contact resistivity according to the slope and intercept of the linear function and a line transmission model.
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Description

technical field

[0001] The invention relates to the technical field of solar cells, in particular to a method for testing the contact resistivity of a passivation contact structure. Background technique

[0002] Passivation contact structures, such as tunnel oxide layer / doped polysilicon layer, ultra-thin intrinsic amorphous silicon layer / heavily doped amorphous silicon layer, not only have excellent interface passivation performance, can significantly reduce metal contact recombination, but also have excellent Excellent contact performance, which facilitates the efficient transport of majority carriers. The excellent performance of the passivation contact structure has attracted extensive attention from research institutions and enterprises. Research institutions such as Fraunhofer in Germany and ISFH Institute of Solar Energy Systems have developed TOPCon batteries and POLO batteries for tunnel oxide / doped polysilicon layer structures. Enterprises such as China Lai, Tianh...

Claims

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