Unlock instant, AI-driven research and patent intelligence for your innovation.

Etching method of lead frame

A lead frame and etching technology, applied in the field of lead frame etching, can solve the problems of high cost and complicated waste liquid treatment, and achieve the effects of easy control, high precision, and small side erosion.

Inactive Publication Date: 2020-07-14
天水华洋电子科技股份有限公司
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the process of manufacturing lead frames, a large amount of ferric chloride waste liquid will be generated, and the treatment of waste liquid is complicated and costly

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Etching method of lead frame

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Such as figure 1 Shown, a kind of etching method of lead frame is characterized in that comprising the steps:

[0024] Step 1: Material selection, select a copper strip substrate with a thickness of 0.1mm, and perform surface dust removal;

[0025] Step 2: Lamination, first wet the copper strip substrate and then press the dry film onto the surface of the copper strip with a film laminating machine, then put the product graphics to be made on the outside of the dry film, cover the cover plate and vacuum fix the graphics On the dry film, the dry film is a photosensitive material composed of polyester film, photoresist film and polyethylene protective film;

[0026] Step 3: Expose to make the dry film undergo photopolymerization, and transfer the lead frame pattern to be made to the dry film;

[0027] Step 4: develop, and remove the dry film that has not undergone photopolymerization;

[0028] Step 5: Etching, spraying the acidic copper chloride etching solution on the...

Embodiment 2

[0032] A kind of etching method of lead frame is characterized in that comprising the steps:

[0033] Step 1: Material selection, select a copper strip substrate with a thickness of 0.2mm, and perform surface dust removal;

[0034] Step 2: Film lamination, the dry film is adhered to the surface of the copper strip under heating and pressure through a film laminating machine, and then the product graphics to be made are placed on the outside of the dry film, and the vacuum fixed graphics are fixed on the dry film after the cover is covered. The position on the film, the dry film is a photosensitive material composed of polyester film, photoresist film and polyethylene protective film;

[0035] Step 3: Expose to make the dry film undergo photopolymerization, and transfer the lead frame pattern to be made to the dry film;

[0036] Step 4: develop, and remove the dry film that has not undergone photopolymerization;

[0037] Step 5: Etching, spraying the acidic copper chloride et...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an etching method of a lead frame and belongs to the field of semiconductor integrated circuits. The method comprises the following steps of: selecting a copper strip substrate; adhering a dry film to the surface of the copper strip through a film pressing machine, placing a to-be-manufactured product pattern on the outer surface of the dry film, covering the dry film witha cover plate, and fixing the pattern on the dry film in a vacuum manner; carrying out photopolymerization reaction on the dry film, and transferring a to-be-manufactured lead frame pattern to the dryfilm; removing the dry film which is not subjected to the photopolymerization reaction; spraying etching liquid to the surface of the copper strip to perform corrosion, and enabling a place with thedry film to be protected from corrosion by the dry film so as to form the lead frame. With the method adopted, a requirement for the high precision of the lead frame can be met, the regeneration of the etching liquid can be achieved, an environmental protection problem is effectively solved, and the application and popularization of the etching method are convenient.

Description

technical field [0001] The invention belongs to the field of semiconductor integrated circuits, in particular to an etching method for a lead frame. Background technique [0002] As a chip carrier of a semiconductor integrated circuit, the lead frame is a key structural part that realizes the electrical connection between the lead-out end of the chip's internal circuit and the outer lead by means of bonding materials (gold wire, aluminum wire, copper wire) to form an electrical circuit. , it plays the role of a bridge connected with external wires. Most semiconductor integrated blocks need to use lead frames. It is an important basic material in the electronic information industry and is widely used in electronic products. The lead frame is stamped or Etching molding, the current traditional manufacturing of lead frames mostly uses ferric chloride etching solution for corrosion molding. A large amount of ferric chloride waste liquid will be produced in the process of manufa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/48
CPCH01L21/4828
Inventor 马文龙康小明康亮
Owner 天水华洋电子科技股份有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More