Organic electroluminescent material containing boron and nitrogen and application thereof on organic electroluminescent devices

A luminescent and electromechanical technology, applied in luminescent materials, electrical solid devices, electrical components, etc., can solve difficult problems such as high exciton utilization rate, high fluorescence radiation efficiency, low state radiation transition rate, and efficiency roll-off, achieving Not easy to aggregate, good industrialization prospects, and the effect of improving device life

Inactive Publication Date: 2020-07-31
JIANGSU SUNERA TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although theoretically TADF materials can achieve 100% exciton utilization, there are actually the following problems: (1) T of the designed molecule 1 and S 1 states have strong CT features, very small S 1 -T 1 state energy gap, although a high T can be achieved by the TADF process 1 →S 1 state exciton conversion rate, but at the same time lead to low S 1 Therefore, it is difficult to have both (or simultaneously achieve) high exciton utilization efficiency and high fluorescence radiation efficiency; (2) Even if doped devices have been used to alleviate the quenching effect of T exciton concentration, most devices made of TADF materials Severe efficiency roll-off at high current densities

Method used

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  • Organic electroluminescent material containing boron and nitrogen and application thereof on organic electroluminescent devices
  • Organic electroluminescent material containing boron and nitrogen and application thereof on organic electroluminescent devices
  • Organic electroluminescent material containing boron and nitrogen and application thereof on organic electroluminescent devices

Examples

Experimental program
Comparison scheme
Effect test

preparation Embodiment 1

[0059] Preparation Example 1: Synthesis of Compound 3:

[0060]

[0061] In a 250mL three-neck flask, under nitrogen protection, 0.02mol raw material 1, 0.022mol raw material 2, 0.05mol sodium tert-butoxide, 0.2mmol Pd 2 (dba) 3 Add 0.2mmol tri-tert-butylphosphine into 150mL toluene, stir and mix, heat to 110-120°C, reflux for 12-16 hours, and the reaction is complete; naturally cool to room temperature, filter, and the filtrate is rotary evaporated under reduced pressure until there is no distillate. Neutral silica gel column to obtain reactant F-1; ESI-MS (m / z) (M+): The theoretical value is 341.21, and the measured value is 341.17.

[0062]

[0063] Under nitrogen atmosphere, add 0.01mol reactant A-1, 0.011mol reactant B-1, 0.03mol potassium carbonate, 1×10 -4 mol Pd(PPh 3 ) Cl 2 and 1×10 -4 mol triphenylphosphine, then add 110ml V 甲苯 :V 乙醇 :V 水 = 1:1:1 mixed solution, heated to reflux for 24 hours, observed the reaction by TLC until the reaction was complete,...

preparation Embodiment 2

[0068] Preparation Example 2: Synthesis of Compound 6:

[0069]

[0070] The preparation method of compound 6 is the same as Preparation Example 1, and the difference is that reactant B-1 is replaced with reactant B-2, and reactant F-1 is replaced with reactant F-2; Elemental analysis structure (molecular formula C 58 h 58 BN 3 O): theoretical value C, 84.55; H, 7.10; B, 1.31; N, 5.10; test value: C, 84.55; H, 7.14; B, 1.33; N, 5.12. ESI-MS(m / z)(M + ): The theoretical value is 823.47, and the measured value is 823.42.

preparation Embodiment 3

[0071] Preparation Example 3: Synthesis of Compound 7:

[0072]

[0073] The preparation method of compound 7 is the same as Preparation Example 1, and the difference is that reactant F-1 is replaced with reactant F-3; Elemental analysis structure (molecular formula C 49 h 47 BN 2 o 2 ): theoretical value C, 83.28; H, 6.70; B, 1.53; N, 3.96; test value: C, 83.27; H, 6.73; B, 1.55; N, 3.94. ESI-MS(m / z)(M + ): The theoretical value is 706.37, and the measured value is 706.35.

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Abstract

The invention discloses an organic electroluminescent material containing boron and nitrogen and application thereof on organic electroluminescent devices, and belongs to the technical field of semiconductors. The organic electroluminescent material containing boron and nitrogen has a structure shown in a general formula (1). The invention also discloses an application of the organic electroluminescent material containing boron and nitrogen on organic electroluminescent devices. The organic electroluminescent material containing boron and nitrogen is composed of boron groups, the rigidity of boron groups is high, and the organic electroluminescent material has the advantages that molecules are not prone to crystallization or aggregation, and the film-forming property is good. When the organic electroluminescent material containing boron and nitrogen is used as a luminescent layer material of an organic electroluminescent device, the current efficiency, the power efficiency and the external quantum efficiency of the device are greatly improved; and meanwhile, the service life of the device is obviously prolonged.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an organic electroluminescent material containing boron and nitrogen and its application in organic electroluminescent devices. Background technique [0002] The application of organic light-emitting diodes (OLEDs) in large-area flat-panel displays and lighting has attracted extensive attention from both industry and academia. However, traditional organic fluorescent materials can only use 25% of the singlet excitons formed by electrical excitation to emit light, and the internal quantum efficiency of the device is low (up to 25%). The external quantum efficiency is generally lower than 5%, and there is still a big gap with the efficiency of phosphorescent devices. Although phosphorescent materials enhance intersystem crossing due to the strong spin-orbit coupling at the center of heavy atoms, the singlet and triplet excitons formed by electrical excitation can be effecti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07F5/02C09K11/06H01L51/54
CPCC07F5/02C09K11/06C09K2211/1096C09K2211/1011H10K85/656H10K85/657
Inventor 李崇谢丹丹叶中华张兆超王芳
Owner JIANGSU SUNERA TECH CO LTD
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