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A kind of preparation method of multi-wavelength laser

A multi-wavelength laser and equipment technology, applied in lasers, laser parts, semiconductor lasers, etc., can solve the problems of affecting crystal quality, uncontrollable wavelength, etc., to improve luminous efficiency, controllable wavelength of luminescence, and eliminate the reduction of optical efficiency. Effect

Active Publication Date: 2021-03-12
潍坊华光光电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, when the traditional process grows and prepares multi-quantum wells with multiple wavelengths, because the materials of each quantum well are different, when they are superimposed on each other, stress will be generated due to the difference in the material of the substrate, which will affect the quality of the crystal and make the emitted wavelength uncontrollable.

Method used

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Experimental program
Comparison scheme
Effect test

preparation example Construction

[0033] A method for preparing a multi-wavelength laser, comprising the steps of:

[0034] a) Put the GaAs substrate into the growth chamber of the MOCVD equipment, 2 Bake at 750±20°C under ambient conditions, and add AsH during baking 3 , remove water and oxygen on the surface of the GaAs substrate, and complete the heat treatment of the GaAs substrate surface;

[0035] b) Lower the temperature in the growth chamber of the MOCVD equipment to 700±20°C, and feed TMGa and AsH 3 , growing a GaAs buffer layer on a GaAs substrate;

[0036]c) Raise the temperature in the growth chamber of the MOCVD equipment to 750±20°C, and feed TMGa, TMAl and AsH 3 , growing n-type Al on the GaAs buffer layer x Ga 1-x As the lower restriction layer;

[0037] d) Reduce the temperature in the growth chamber of the MOCVD equipment to 700±20°C, and feed TMGa, TMAl and AsH 3 , in n-type Al x Ga 1-x Growth of Al on the lower confinement layer of As x Ga 1-x As lower waveguide layer;

[0038] ...

Embodiment 1

[0052] The baking time in step a) is 30 minutes.

Embodiment 2

[0054] The thickness of the GaAs buffer layer in step b) is 100-500nm, and the doping concentration in the growth chamber of the MOCVD equipment is 1E17-5E18 atoms / cm when growing the GaAs buffer layer 3 . Particularly preferably, the thickness of the GaAs buffer layer is 200nm, and the doping concentration in the growth chamber of the MOCVD equipment is 1E18 atoms / cm when growing the GaAs buffer layer 3 .

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PUM

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Abstract

A method for preparing a multi-wavelength laser, in which a multi-wavelength multi-quantum well structure is prepared in one growth process, so it is not necessary to bond a single-wavelength multi-quantum well light-emitting structure or device to generate a multi-wavelength light output, Therefore, there is no reflection of light by the bonding metal layer, which can eliminate the reduction of light efficiency caused by the structure, and improve the luminous efficiency in the application of LD devices. Since the lattice constant of the AlGaAs or AlGaInP material matches the lattice constant of the GaAs substrate material, there is no stress after the growth of the stress-free waveguide layer, which will offset the stress generated during the growth of the AlGaInAs first quantum well light-emitting region, and will also offset the The stress generated when the GaAsP second quantum well light-emitting region continues to grow on it. The stress-free AlGaInAs first quantum well and the GaAsP second quantum well have better crystal quality, and their luminous wavelengths are more controllable. The recombination probability of electrons and holes increases, which improves the luminous efficiency.

Description

technical field [0001] The invention relates to the technical field of laser manufacturing, in particular to a method for preparing a multi-wavelength laser. Background technique [0002] In order to further increase the communication capacity, the modern optical fiber WDM communication system is developing towards more and more channels. Multi-wavelength lasers can provide the required light sources for multiple channels at the same time, making the design of the optical transmitter more compact and economical, so they are very important in dense wavelength division multiplexing systems. At the same time, multi-wavelength light sources with excellent performance are also of great application value in the fields of laser ranging, spectral analysis and distributed optical fiber sensing. Therefore, the development of multi-wavelength lasers is undoubtedly of great significance. [0003] In the prior art, multiple single-wavelength lasers are generally used to manufacture opt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/343
CPCH01S5/34353H01S5/3436
Inventor 李志虎朱振张新郑兆河徐现刚
Owner 潍坊华光光电子有限公司