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Single nanowire and preparation method thereof, hydrogen sensor and micro-nano electromechanical equipment

A nanowire, single-wire technology, applied in the field of hydrogen sensor and micro-nano electromechanical equipment, single nanowire, can solve the problems of device failure and damage, the overall stability of the device needs to be improved, the size of the Pd film is large, etc. Phase transition reaction, solving hydrogen embrittlement effect, device firm and stable effect

Inactive Publication Date: 2020-08-04
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Through the above analysis, the problems and defects of the prior art are: (1) the Pd material H of the prior art 2 The Pd film in the sensor has a large size and a large specific surface area, resulting in poor hydrogen sensitivity
[0008] (2) In the prior art, Pd nanowires are often thicker, the sensitivity is not high, and the response recovery time is long, which cannot meet the application requirements
[0009] (3) For the research on the hydrogen sensitivity of Pd, people ignore the adsorption on its surface
[0010] (4) H based on Pd nanowires 2 The stability of the sensor device is poor, and it is prone to hydrogen embrittlement, which leads to device failure and damage. Secondly, the overall stability of the device needs to be improved
[0013] The main innovation point of the present invention is to draw different reaction mechanism analysis according to different experimental data (phenomenon), and prior art generates PdH x , the resistance becomes larger

Method used

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  • Single nanowire and preparation method thereof, hydrogen sensor and micro-nano electromechanical equipment
  • Single nanowire and preparation method thereof, hydrogen sensor and micro-nano electromechanical equipment
  • Single nanowire and preparation method thereof, hydrogen sensor and micro-nano electromechanical equipment

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preparation example Construction

[0063] like figure 1 As shown, the present invention provides a method for preparing the single nanowire, comprising:

[0064] S101, in SiO 2 / Si substrates are fabricated with Au electrodes using photolithography, sputtering or Lift-off basic MEMS processes.

[0065] S102, using electron beam exposure technology, sputtering or Lift-off basic MEMS process to fabricate and prepare Pd nanowires on the substrate with gold electrodes.

[0066] The step S101 Au electrode fabrication method includes:

[0067] (1) After cleaning the SiO 2 / Si substrate was spin-coated with photoresist, and then the substrate was placed on a heating table for baking; the baking temperature was 100° C. and the baking time was 3 min.

[0068] (2) Place the substrate on the stage of the lithography machine, cover it with a special metal mask, and expose it twice with ultraviolet light; the two exposure times are 5s and 10s respectively, and bake at 100°C after the first exposure. Bake for 2 minutes...

Embodiment

[0080] Step 1: Au electrode preparation

[0081] a. After cleaning the SiO 2 / Si substrate is spin-coated with photoresist (AZ5214), and then the substrate is placed on a heating table for baking; in the present invention, the baking temperature is set to 100° C. and the baking time is 3 minutes.

[0082] b. Place the substrate on the stage of the lithography machine, cover it with a special metal mask, and expose it twice with ultraviolet light; set the two exposure times to be 5s and 10s respectively, and 100 after the first exposure. Bake at ℃ for 2 min.

[0083] c. "Rinse" the exposed substrate in an appropriate amount of developer, and then bake it again; set the development time to 40s, the baking temperature to 100°C, and the time to 30min.

[0084] d, utilize the magnetron sputtering apparatus to deposit metal Ti and Au respectively on the above-mentioned substrate surface, then place in acetone solution ultrasonic cleaning to remove the photoresist, and the desired ...

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Abstract

The invention belongs to the technical field of nano metal materials, and discloses a single nanowire and a preparation method thereof, a hydrogen sensor and micro-nano electromechanical equipment. Achannel is etched in the middle of the metal layer; and the single nanowire is deposited in the channel. The nanowire provided by the invention is ultrathin, and solves the problems of low reaction sensitivity and the like when Pd is used as a hydrogen sensitive material. Compared with a Pd film, the nanowire is large in specific surface area and more excellent in hydrogen sensitivity. The methodis operated under a visual condition, and the size, the position and the number of the Pd nanowires can be controllably adjusted as required.

Description

technical field [0001] The invention belongs to the technical field of nano metal materials, and in particular relates to a single nano wire, a preparation method, a hydrogen sensor and a micro-nano electromechanical device. Background technique [0002] At present, with the rapid development of nanotechnology and micro-nano electromechanical systems, miniaturized, simplified and portable nano-devices have become one of the main research hotspots of researchers. In recent years, nano-metal materials have attracted great attention due to their unique optical, electrical, catalysis, sensing and other properties. [0003] Precious metal Pd can rapidly adsorb and crack H 2 , which in turn forms PdH with H x ;PdH x The resistance is proportional to the H content, while PdH x The H content in the 2 Concentrations are closely related: H 2 The higher the concentration, the higher its resistance, enabling H 2 detection. However, Pd is in contact with H 2 During the reaction,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/02B81C1/00B82Y40/00G01N27/12
CPCG01N27/127B81B7/02B81C1/00626B82Y40/00B81B2201/02
Inventor 胡永明赵鹏飞曹凡王钊顾豪爽
Owner HUBEI UNIV