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Piezoelectric resonator based on gallium oxide film and preparation method thereof

A piezoelectric resonator, gallium oxide technology, applied in electrical components, impedance networks, etc., can solve the problems of poor stability and high temperature resistance of resonators, low electromechanical coupling coefficient, and insufficient piezoelectric characteristics. Electromechanical coupling coefficient, avoiding energy absorption, the effect of simple structure

Active Publication Date: 2020-08-07
上海您惦半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing piezoelectric thin films are usually prepared by magnetron sputtering process, such as ZnO, AlN, etc. The piezoelectric properties of the materials themselves are not strong enough and they are polycrystalline structures. There are a large number of grain boundaries and defects, which cause the absorption of acoustic vibration energy. , increasing the loss, resulting in a low electromechanical coupling coefficient
In addition, the large number of grain boundaries and defects in the polycrystalline piezoelectric film can also cause problems such as poor stability and high temperature resistance of the resonator

Method used

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  • Piezoelectric resonator based on gallium oxide film and preparation method thereof
  • Piezoelectric resonator based on gallium oxide film and preparation method thereof
  • Piezoelectric resonator based on gallium oxide film and preparation method thereof

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Embodiment 1

[0021] Such as figure 1 , 2 As shown, a gallium oxide-based thin film according to the present invention includes a substrate 101 hollowed out in the middle, and a piezoelectric thin film fixedly arranged on the substrate 101 . The piezoelectric film is provided with electrode pairs at the corresponding positions of the hollow substrate 101, and the electrode pairs are electrically connected with the piezoelectric film. The piezoelectric thin film is a gallium oxide thin film 102, preferably an ε-phase gallium oxide single crystal thin film, with a thickness of 0.1um to 20um. The electrode pair includes a first electrode 103 and a second electrode 104 , the first electrode 103 is disposed on the upper surface of the gallium oxide film 102 , and the second electrode 104 is disposed on the lower surface of the gallium oxide film 102 .

[0022] The working principle is that the input and output of electric signals are realized by the first electrode 103 and the second electrode...

Embodiment 2

[0029] Such as image 3 , 4 As shown, the difference between this embodiment and Embodiment 1 is mainly that the electrode pair is the first electrode 103 and the second electrode 104 which are mutually interdigitated electrode structures, and the electrode pairs are all arranged on the upper surface of the gallium oxide film 102 , the horizontal position adapts to the position corresponding to the hollowing out of the substrate 101 .

[0030] The working principle is that the input and output of electrical signals are realized by the electrode pairs located on the upper surface of the gallium oxide film 102 by utilizing the transverse piezoelectric effect, and the advantage is that the structure is simple and the manufacturing process steps are few.

[0031] The preparation method comprises the following detailed steps:

[0032] Growing a piezoelectric thin film: epitaxially growing an ε-phase gallium oxide single crystal thin film on the substrate 101 by metal-organic chem...

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Abstract

The invention discloses a piezoelectric resonator based on a gallium oxide film and a preparation method of the piezoelectric resonator, and relates to a semiconductor technology. The piezoelectric resonator is provided for solving the problem that the electromechanical coupling coefficient is not high in the prior art, and comprises a substrate with a hollow middle part and a piezoelectric film fixedly arranged on the substrate, wherein the piezoelectric film is provided with an electrode pair at a position corresponding to the hollow middle part of the substrate, the electrode pair is electrically connected with the piezoelectric film, and the piezoelectric film is made of a gallium oxide material. The piezoelectric resonator has the advantages of utilizing the extremely high piezoelectric property of gallium oxide, and being capable of guaranteeing that the piezoelectric resonator has a very high electromechanical coupling coefficient. Furthermore, by adopting an epsilon-phase gallium oxide single crystal film, energy absorption caused by grain boundaries and defects can be avoided, the loss is reduced, and the stability of the device can be greatly improved. In addition, the thin-film piezoelectric resonator is simple in structure, good in processing repeatability and beneficial to industrial production.

Description

technical field [0001] The invention relates to semiconductor technology, which is a new generation of information technology, in particular to a gallium oxide film-based piezoelectric resonator and a preparation method thereof. Background technique [0002] Piezoelectric resonators are widely used in the construction of radio frequency filters and oscillators, and are one of the important devices in the field of radio frequency communication; in addition, piezoelectric resonators can also be used to implement sensors. With the rapid development of communication technology, the era of big data and Internet of Things has come, the development direction of piezoelectric resonators will be high frequency, low power consumption, miniaturization, integration and low cost. Thin-film piezoelectric resonators have incomparable advantages in frequency, power capacity, volume and cost over traditional ceramic dielectric resonators. Thin-film piezoelectric resonators are usually compo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/17H03H3/02
CPCH03H3/02H03H9/171H03H2003/023
Inventor 卢星王钢陈梓敏
Owner 上海您惦半导体科技有限公司