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Biomimetic synaptic device based on Pd conductive filaments, preparation method and application thereof

A technology of synaptic devices and conductive filaments, which is applied in the fields of electronics and materials science, can solve the problems of unsatisfactory switching discreteness of device performance, and achieve the effects of reducing discreteness, good enhancement and inhibition, and centralized switching voltage distribution

Active Publication Date: 2020-08-11
HEBEI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although there have been some reports on biomimetic synapse devices, the device performance and switch discreteness are not ideal.

Method used

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  • Biomimetic synaptic device based on Pd conductive filaments, preparation method and application thereof
  • Biomimetic synaptic device based on Pd conductive filaments, preparation method and application thereof
  • Biomimetic synaptic device based on Pd conductive filaments, preparation method and application thereof

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Embodiment Construction

[0024] In order to better illustrate the biomimetic synapse device in this embodiment, the structure and function of the device and the technical solution of this design are introduced in detail below with reference to the accompanying drawings.

[0025] The structure of the biomimetic synapse device provided by the present invention includes a substrate NSTO, on which a two-dimensional tin selenide (SnSe) film is made as a functional layer, and a Pd top electrode layer is grown on the SnSe film to form a Pd / SnSe / NSTO structure devices. The SnSe and Pd layers were prepared by pulsed laser and magnetron sputtering techniques, respectively.

[0026] The preparation process of Pd / SnSe / NSTO biomimetic synapse device is introduced as follows:

[0027] 1. Prepare 99.999% Sn granules and 99.999% Se granules, mix them and mill them with a ball mill for 1 hour to form a uniform powder, then place them in a muffle furnace at 950°C for the first calcination for 24 hours, then cool for ...

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Abstract

The invention provides a biomimetic synapse device based on Pd conductive filaments, a preparation method and application thereof. The bionic device is composed of a niobium-doped strontium titanate (NSTO) substrate, a tin selenide (SnSe) functional layer and a Pd top electrode layer. According to the invention, the high-quality SnSe layer and the Pd layer are respectively prepared by applying pulse laser deposition and magnetron sputtering technologies; the SnSe film is selected as the functional layer, and Sn and Se defects are easily formed on the SnSe film under the action of an external electric field, so that the stable Pd conductive filaments can be formed on the device; and the device provided by the invention can well simulate the synaptic enhancement and suppression characteristics in RESET and SET regions, and reduce the discreteness of the switching voltage.

Description

technical field [0001] The invention relates to the technical fields of electronics and materials science, in particular to a biomimetic synapse device based on Pd conductive filaments and its preparation method and application. Background technique [0002] Efficient, fast, and low-power, the human brain has long been considered a "supercomputer" for processing information. Neuromorphic computing is a new computing model that simulates neurobiological processes by building a computing architecture similar to the human brain. Simulating synapses is an important step toward realizing efficient artificial neuromorphic systems. The artificial neuromorphic computing structure formed by existing electronic devices is difficult to compare with the perception, learning and memory of the human brain. There are as many as 10 in the human brain 11 neurons and 10 15 A synapse, especially the connection between neurons is very complex, which determines that ordinary electronic devic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/245H10N70/8825H10N70/011
Inventor 闫小兵王宏王淑芳
Owner HEBEI UNIVERSITY