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Fully self-driven graphene transistor, logic device and sensor array

A graphene, self-driven technology, applied in the field of sensors and triboelectronics, can solve problems such as high energy consumption, achieve the effect of saving materials, high sensitivity, and simplifying the production process

Active Publication Date: 2020-08-25
BEIJING INST OF NANOENERGY & NANOSYST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the development of clinical and medical monitoring has put forward higher requirements for self-driven sensors such as high sensitivity, high resolution and device integration. At the same time, wearable sensors currently have high energy consumption requirements for driving external voltages.

Method used

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  • Fully self-driven graphene transistor, logic device and sensor array
  • Fully self-driven graphene transistor, logic device and sensor array
  • Fully self-driven graphene transistor, logic device and sensor array

Examples

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Effect test

no. 1 example

[0052] In a first exemplary embodiment of the present disclosure, a fully self-driving graphene transistor is provided.

[0053] Figure 1A-Figure 1C They are the front view, top view and right view of the fully self-driven graphene transistor according to an embodiment of the present disclosure, respectively.

[0054] refer to Figure 1A-Figure 1C As shown, the fully self-driven graphene transistor of the present disclosure includes: a base layer 11; an electrode layer, including a source 121, a drain 122 and a gate 14, located on the base layer 11; wherein, the source 121 and the drain The source-drain voltage between the poles 122 is provided by the polypyrrole generator 2, and the polypyrrole generator 2 generates a direct current with a controllable size under pressure; graphene is used as the channel layer 13, connected to the source electrode 121 and the drain electrode 122 Between, the grid voltage is provided by the electromotive force generated by the contact-separat...

no. 2 example

[0091] In a second exemplary embodiment of the present disclosure, a logic device including several fully self-driving graphene transistors is provided.

[0092] In this embodiment, the logic device includes one or a combination of the following devices: an inverter, an AND gate, a NOT gate, an OR gate, a NAND gate, a NOR gate, an XOR gate and a NOR gate.

no. 3 example

[0094] In a third exemplary embodiment of the present disclosure, a sensor array including several fully self-driving graphene transistors is provided.

[0095] Image 6 It is a result curve of pressure and gesture detection using a fully self-driven graphene transistor according to an embodiment of the present disclosure.

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Abstract

The invention discloses a fully self-driven graphene transistor, a logic device and a sensor array. The fully self-driven graphene transistor comprises a substrate layer and an electrode layer. The electrode layer comprises a source electrode, a drain electrode and a gate electrode and is positioned on the substrate layer; the source-drain voltage between the source electrode and the drain electrode is provided by a polypyrrole generator, and the polypyrrole generator generates direct current with controllable magnitude under the action of pressure; the graphene serves as a channel layer and is connected between the source electrode and the drain electrode, and gate voltage is provided by electromotive force generated by contact-separation induction of an external object and the gate; thepolypyrrole generator generates controllable source-drain voltage under the action of pressure to regulate and control the concentration of carriers generated in the graphene channel layer, and meanwhile, the channel layer performs fully self-driven electrical output under the regulation and control action of gate voltage. The fully self-driven effect is achieved, energy consumption is almost zero, meanwhile, high integration level and high sensitivity are achieved, and gesture and pressure dual detection can be achieved at the same time.

Description

technical field [0001] The disclosure belongs to the technical field of sensors and triboelectronics, and relates to a fully self-driven graphene transistor, a logic device and a sensor array. Background technique [0002] A flexible wearable sensor is an electronic device or electronic system that is worn on the human body using new materials, micro-processing technology, and integrated circuit technology. [0003] In order to meet the needs of wearable and energy-saving devices, self-driven wearable sensors have become a research hotspot. With the advent of the triboelectric generator (TENG), a new energy conversion method that can convert mechanical energy into electrical energy based on the coupling of triboelectricity and electrostatic induction in 2012, the way to realize self-driving is in the original piezoelectric and thermoelectric, etc. A new platform is added on the basis of the way. [0004] At present, self-powered sensors based on triboelectric nanogenerator...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/78H01L27/02G01L1/16
CPCH01L29/0603H01L29/1606H01L29/78H01L27/0207G01L1/16
Inventor 孙其君孟艳芳
Owner BEIJING INST OF NANOENERGY & NANOSYST
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