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Preparation method of two-dimensional beta-Ga2O3 based on silicon substrate

A -ga2o3, silicon substrate technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as difficult control of thickness and complicated operation, and achieve easy acquisition, low preparation threshold, and low requirements for reaction equipment Effect

Pending Publication Date: 2020-09-01
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the mechanical peeling method is simple, it is difficult to control the size and thickness of the sample obtained by peeling
For β-Ga 2 o 3 This non-two-dimensional structure material is prepared by chemical vapor deposition method in two-dimensional β-Ga 2 o 3 , requires strict control of the growth process, and the operation is complicated

Method used

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  • Preparation method of two-dimensional beta-Ga2O3 based on silicon substrate
  • Preparation method of two-dimensional beta-Ga2O3 based on silicon substrate
  • Preparation method of two-dimensional beta-Ga2O3 based on silicon substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] A two-dimensional β-Ga based on silicon substrate 2 o 3 The preparation method comprises the following steps:

[0021] (1) Selecting a P-type silicon chip with an oxide layer thickness of 200 nanometers, and selecting one side of the smooth oxide layer as the growth surface;

[0022] (2) (2) use absolute ethanol, acetone, deionized water to clean the silicon chip successively, and the silicon chip after cleaning is air-dried in the fume hood, and then uses argon ions to process the surface of the silicon chip to make the surface of the silicon chip clean and dust-free; , the SiO with a thickness of 200nm on the P-type silicon wafer 2 Floor;

[0023] (3) The layered two-dimensional gallium selenide is peeled off from the gallium selenide crystal by mechanical peeling method, and the gallium selenide thin film is obtained by tearing off the tape for 6 times;

[0024] (4) Press the obtained gallium selenide film vertically onto the smooth surface of the processed silic...

Embodiment 2

[0027] A two-dimensional β-Ga based on silicon substrate 2 o 3 The preparation method comprises the following steps:

[0028] (1) Selecting a P-type silicon chip with an oxide layer thickness of 200 nanometers, and selecting one side of the smooth oxide layer as the growth surface;

[0029] (2) Use absolute ethanol, acetone, and deionized water to clean the silicon wafers successively. The silicon wafers after cleaning are air-dried in a fume hood, and then the surface of the silicon wafers is treated with argon ions to make the surface of the silicon wafers clean and dust-free; wherein, the P-type SiO with a thickness of 200nm on the silicon wafer 2 Floor;

[0030] (3) Using a mechanical stripping method to peel off the layered two-dimensional gallium selenide from the gallium selenide crystal, and tear it 3 times through the tape to obtain the gallium selenide film;

[0031] (4) Press the obtained gallium selenide thin film vertically onto the smooth surface of the proce...

Embodiment 3

[0034] A two-dimensional β-Ga based on silicon substrate 2 o 3 The preparation method comprises the following steps:

[0035] (1) Selecting a P-type silicon chip with an oxide layer thickness of 200 nanometers, and selecting one side of the smooth oxide layer as the growth surface;

[0036] (2) Use absolute ethanol, acetone, and deionized water to clean the silicon wafers successively. The silicon wafers after cleaning are air-dried in a fume hood, and then the surface of the silicon wafers is treated with argon ions to make the surface of the silicon wafers clean and dust-free; wherein, the P-type SiO with a thickness of 200nm on the silicon wafer 2 Floor;

[0037] (3) The layered two-dimensional gallium selenide is peeled off from the gallium selenide crystal by mechanical stripping method, and the gallium selenide film is obtained by tearing it 8 times through tape;

[0038] (4) Vertically press the obtained gallium selenide thin film onto the smooth surface of the proc...

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Abstract

The invention discloses a preparation method of two-dimensional beta-Ga2O3 based on a silicon substrate, and belongs to the technical field of semiconductor materials. The method comprises the following steps: S1, stripping a gallium selenide crystal to obtain two-dimensional gallium selenide, and transferring the two-dimensional gallium selenide to a pretreated silicon substrate to obtain two-dimensional gallium selenide on the silicon substrate; and S2, carrying out heat preservation on the two-dimensional gallium selenide on the silicon substrate obtained in the step S2 at 550 DEG C for 5 hours, and then cooling to room temperature to obtain the two-dimensional beta-Ga2O3 based on the silicon substrate. According to the preparation method provided by the invention, heat treatment on thetwo-dimensional gallium selenide on the silicon substrate can be completed in an air environment, strict reaction conditions are not needed in the preparation process, the requirement on reaction equipment is not high, and the preparation threshold is low.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, in particular to a two-dimensional β-Ga 2 o 3 method of preparation. Background technique [0002] For nearly half a century, semiconductor technology based on silicon materials has supported the development of the entire electronics industry. However, as the industry as a whole has improved device performance requirements, traditional materials have been difficult to meet the demand, and emerging materials have begun to emerge. Since the discovery of two-dimensional materials represented by graphene in 2004, two-dimensional materials have attracted much attention due to their special electrical and optical properties, and have been widely used in electronic and optoelectronic devices. As an emerging two-dimensional material, two-dimensional β-Ga 2 o 3 Has many excellent properties. (1) Two-dimensional β-Ga 2 o 3 It has an extremely wide band gap, which makes its device hav...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02381H01L21/02565H01L21/02658H01L21/02664
Inventor 苏杰常晶晶张鹏亮林珍华郝跃
Owner XIDIAN UNIV