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VDW dielectric material and preparing method and application thereof

A dielectric material and inorganic technology, applied in the field of two-dimensional material preparation, to achieve the effect of ensuring evaporation process, good device properties, and good insulation properties

Active Publication Date: 2020-09-04
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The integration of such devices relies on fixed-point transfer technology, and there are still many technical difficulties in the large-scale preparation of such devices.

Method used

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  • VDW dielectric material and preparing method and application thereof
  • VDW dielectric material and preparing method and application thereof
  • VDW dielectric material and preparing method and application thereof

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preparation example Construction

[0033] A method for preparing a van der Waals dielectric material provided by an embodiment of the present invention, such as figure 1 shown, including the following steps:

[0034] Inorganic molecular crystals are used as the evaporation source, and the method of thermal evaporation is adopted. Due to the weak van der Waals interaction between molecules, the evaporation source can be sublimated at a relatively low temperature under high vacuum conditions, so the internal structure of the molecule can be destroyed. In the case of high vacuum, the inorganic molecular crystals are sublimated to form molecular vapor, and then evaporated to obtain a van der Waals film. Since there are no unsaturated chemical bonds in the inorganic molecules, the surface of the prepared van der Waals film has no dangling bonds, and the van der Waals dielectric material is completed. preparation.

[0035] Further, the molecular crystal Sb with a band gap of 4eV 2 o 3 The powder is used as an evap...

Embodiment 1

[0041] Choose inorganic molecular crystal Sb 2 o 3 As the evaporation source, silicon oxide is selected as the substrate, the molecular structure is maintained during the evaporation process, and the Sb evaporated on the substrate 2 o 3 There are no dangling bonds on the surface of the film, resulting in Sb 2 o 3 substrate. Such as figure 2 As shown, it is Sb with a thickness of 40nm prepared on a silicon oxide substrate 2 o 3 Thin film and substrate before evaporation, it can be seen that Sb on the entire substrate 2 o 3 The film has high uniformity; as Figure 3a and Figure 3b Shown, is the Sb under the atomic force microscope 2 o 3 The substrate and its surface relief curve, it can be seen that the Sb 2 o 3 The film is smooth and free of defects such as voids; Figure 4 Shown, for Sb 2 o 3 Raman optical characterization of the film, the results show that its Raman spectrum is consistent with that of the evaporated Sb 2 o 3 The Raman spectra of the powde...

Embodiment 2

[0043] Choose inorganic molecular crystal Sb 2 o 3 As the evaporation source, transparent glass is selected as the substrate, and the Sb evaporated on the substrate 2 o 3 No dangling bonds on film surface; test for Sb 2 o 3 The absorption spectrum of the thin film, such as Figure 5 As shown, by measuring the absorption spectrum, its forbidden band width is determined to be 4.0eV, indicating that Sb 2 o 3 Thin films are insulators.

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Abstract

The invention belongs to the field of two-dimensional material preparing, and particularly discloses a VDW dielectric material and a preparing method and application thereof. The method comprise the following steps that an inorganic molecular crystal serves as an evaporation source, a heat evaporation method is adopted, the inorganic molecular crystal is subjected to sublimation under the high vacuum, meanwhile, a perfect molecular structure of the crystal can be kept, evaporation is carried out, and a VDW film is obtained. Due to the fact that unsaturated chemical bonds do not exist in inorganic molecules, the VDW film surface has no suspension bonds, and preparing of the VDW dielectric material can be finished. The prepared VDW film can serve as a dielectric material of a two-dimensionalmaterial electronic device, the scattering source of carriers in a two-dimensional groove material can be obviously reduced, it is ensured that a two-dimensional material has the high migration rate,meanwhile, a preparing technology and a semiconductor preparing technology are compatible, and scale preparing and integrating are easy.

Description

technical field [0001] The invention belongs to the field of two-dimensional material preparation, and more specifically relates to a van der Waals dielectric material and its preparation method and application. Background technique [0002] Since the discovery of graphene, two-dimensional semiconductor materials have aroused extensive research interests due to their great application prospects in next-generation transistors. This is mainly due to the fact that it can still maintain high carrier mobility under the condition of atomic-level thickness, which can effectively avoid the short channel effect and other problems that current silicon-based transistors face when they are further miniaturized. However, when two-dimensional materials are integrated into devices, their physical properties (including mobility, which determines important parameters such as transistor switching speed) are easily affected by their surrounding environment. In SiO 2 The mobility of two-dimen...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/24H01L29/51H01L29/778
CPCC23C14/08C23C14/24H01L29/517H01L29/778
Inventor 刘开朗金宝翟天佑李会巧
Owner HUAZHONG UNIV OF SCI & TECH
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