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Preparation process of gapless laminated film capacitor

A film capacitor and preparation technology, applied in the direction of film/thick film capacitors, laminated capacitors, fixed capacitor electrodes, etc., can solve the problems of affecting the high frequency characteristics of capacitance and affecting energy storage density, etc., and achieve high dielectric constant and large Effect of equivalent electrode surface area and reduction of equivalent inductance

Inactive Publication Date: 2020-09-04
GUILIN UNIVERSITY OF TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, most film capacitors are winding structures. Although they have a series of advantages, they will affect the high-frequency characteristics of the capacitor (the relatively large parasitic inductance generated by the winding structure), and there are gaps between the winding structures, which will affect the energy. storage density

Method used

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  • Preparation process of gapless laminated film capacitor
  • Preparation process of gapless laminated film capacitor
  • Preparation process of gapless laminated film capacitor

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Embodiment Construction

[0018] The working principle and implementation method of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0019] Such as figure 1 As shown, (a) is to prepare a dielectric layer on the electrode base material, (b) is to use the electric explosive wire method to prepare the first layer of conductive layer on the surface of the dielectric layer, (c) is to prepare a dielectric layer on the surface of the conductive layer , (d) is to adopt the electric explosive wire method to prepare the second layer of conductive layer on the surface of the dielectric layer, (e) is to prepare the dielectric layer on the surface of the conductive layer, (f) is to adopt the electric explosive wire method to prepare on the surface of the dielectric layer The third conductive layer.

[0020] figure 1 The preparation process of the stacked structure is shown, in which the mask layer at the edge of the material is to prevent the electro...

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Abstract

The invention discloses a preparation process of a gapless laminated film capacitor, and belongs to the field of principles and preparation of novel electronic components. The film capacitor is formedby stacking a metal conductive layer film and a metal oxide or nitride dielectric layer film layer by layer, and has the advantages of high capacity, wide working temperature range, low parasitic inductance, low equivalent series impedance (ESR) and the like, wherein the conductive layer of the capacitor adopts an electric explosion wire spraying method to prepare the metal conductive layer thinfilm on a base material, and the dielectric layer adopts a thermal oxidation method to oxidize the surface of the metal thin film to obtain the dielectric thin film.

Description

technical field [0001] The invention belongs to the field of preparation of electronic components, in particular to a structure of a gapless laminated film capacitor. Background technique [0002] Capacitors in RF circuits need to have good high-frequency characteristics and low loss, especially with the development of mobile communication equipment, RF circuits are required to achieve low power consumption, wide operating temperature range, and small size while ensuring Output Power. Therefore, capacitors in radio frequency circuits not only need to have high energy storage density, but also need to have good temperature stability. [0003] There are many kinds of capacitors, among which film capacitors are made of conductive layer and dielectric layer film by winding and stacking, etc., with high insulation resistance, excellent frequency characteristics, small dielectric loss, fast charge and discharge speed, long life, non-polarity, etc. Features, are widely used in ra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G4/005H01G4/08H01G4/10H01G4/33
CPCH01G4/005H01G4/08H01G4/10H01G4/33
Inventor 杨家志蒋存波应安文尹新哲
Owner GUILIN UNIVERSITY OF TECHNOLOGY
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