Programmable overvoltage protection device having VDMOS and thyristor
A technology for protection devices and thyristors, applied in the field of programmable overvoltage protection devices, can solve the problems of poor temperature characteristics, large on-resistance, slow response speed, etc., and achieve high temperature stability, fast response speed, and fast switching speed. Effect
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[0045] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.
[0046] Such as figure 1 As shown in A, a programmable overvoltage protection device with VDMOS and thyristor provided by the first embodiment of the present invention includes a first VDMOS24, a first NPNP thyristor 26, a second VDMOS25 and a second NPNP thyristor 27, wherein the first The source of VDMOS24 is connected to the P-type gate of the first NPNP thyristor 26, and the drain of the first VDMOS24 is connected to the anode of the first NPNP thyristor 25; the source of the second VDMOS25 is connected to the P-type gate of the second NPNP thyristor 27, and The drain of the second VDMOS25 is connected to the anode of the second NPNP thyristor 27;
[0047] The gate of the first VDMOS24 is connected to the gate o...
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