Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Programmable overvoltage protection device having VDMOS and thyristor

A technology for protection devices and thyristors, applied in the field of programmable overvoltage protection devices, can solve the problems of poor temperature characteristics, large on-resistance, slow response speed, etc., and achieve high temperature stability, fast response speed, and fast switching speed. Effect

Active Publication Date: 2020-09-04
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this structure also has certain problems. Since the triode is a bipolar device, the switching speed is slow, the frequency is low, the on-resistance is large, so the power consumption is high, and the current amplification factor β is greatly affected by the temperature. For the protection device as a whole It will show undesirable characteristics such as slow response speed, poor temperature characteristics, and large power consumption.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Programmable overvoltage protection device having VDMOS and thyristor
  • Programmable overvoltage protection device having VDMOS and thyristor
  • Programmable overvoltage protection device having VDMOS and thyristor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0046] Such as figure 1 As shown in A, a programmable overvoltage protection device with VDMOS and thyristor provided by the first embodiment of the present invention includes a first VDMOS24, a first NPNP thyristor 26, a second VDMOS25 and a second NPNP thyristor 27, wherein the first The source of VDMOS24 is connected to the P-type gate of the first NPNP thyristor 26, and the drain of the first VDMOS24 is connected to the anode of the first NPNP thyristor 25; the source of the second VDMOS25 is connected to the P-type gate of the second NPNP thyristor 27, and The drain of the second VDMOS25 is connected to the anode of the second NPNP thyristor 27;

[0047] The gate of the first VDMOS24 is connected to the gate o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a programmable overvoltage protection device with a VDMOS and a thyristor, and belongs to the technical field of power semiconductors. According to the programmable overvoltage protection device, two VDMOSs are used for providing independent control over two NPNP thyristors respectively, and the gate ends of the VDMOSs are connected with negative power supply voltage; or,the two VDMOSs are respectively used for providing independent control over the two PNPN thyristors; the gate end of the VDMOS is connected with positive power supply voltage; when the negative voltage on the telephone line is lower than a threshold voltage of the power supply voltage or the positive voltage is higher than the threshold voltage of the power supply voltage, the device is started and conducts overvoltage generated by surge on the transmission line to the ground, so that a subscriber line interface circuit (SLIC) is protected from surge overvoltage caused by lightning stroke andother factors, one-way programmable protection is realized, and the characteristics of a VDMOS longitudinal structure and a unipolar device are utilized, so that the power consumption is low, the temperature characteristic is good, the programmable input voltage range is wider, and the surge voltage bearing capacity is higher.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, in particular to a programmable overvoltage protection device with a VDMOS and a thyristor. Background technique [0002] With the rapid development of modern electronic communication technology, the transmission speed and efficiency continue to increase. At the same time, electronic equipment and complete systems have higher and higher requirements for external voltage. Voltage transients and surge currents will cause malfunctions or even damage to communication equipment and the whole system, so surge protection devices are needed to protect them. After Europe and the United States successively promulgated standards for anti-lightning surges of communication equipment, my country promulgated the "People's Republic of China Communication Industry Standards for Telecommunications Terminal Equipment Lightning Protection Technical Requirements and Experimental Methods YD / T9931998" in 1...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/02H01L29/78
CPCH01L27/0262H01L27/0266H01L27/0296H01L29/7802
Inventor 李泽宏何云娇王彤阳莫家宁蒲小庆程然王志明任敏张金平高巍张波
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products