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Nitride semiconductor element

A technology of nitride semiconductors and components, which is applied to the structure of semiconductor devices, semiconductor lasers, and optical waveguide semiconductors, and can solve problems such as difficulties in growing AlGaN films, high laser excitation threshold current density, and difficulties in growing AlGaN

Active Publication Date: 2020-09-15
ASAHI KASEI KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The reason for this is that the growth of high-quality AlGaN thin films is difficult, and the growth of AlGaN with a high Al composition and conductivity type necessary for light confinement is extremely difficult, so the threshold current density required for laser excitation is high.

Method used

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no. 1 Embodiment approach 〕

[0049] The nitride semiconductor device according to the first embodiment which is an example of the present invention can perform laser excitation by current injection of ultraviolet light. Therefore, the nitride semiconductor device of this embodiment can be applied to a laser diode capable of emitting ultraviolet light. The nitride semiconductor device of this embodiment can obtain light emission in each region such as UVA with a wavelength of 380 nm to 320 nm, UVB with a wavelength of 320 nm to 280 nm, and UVC with a wavelength of 280 nm to 200 nm.

[0050] use Figure 1 to Figure 8 The nitride semiconductor device according to the first embodiment of the present invention will be described. first use figure 1 and figure 2 A schematic configuration of the nitride semiconductor device 1 of this embodiment will be described.

[0051] Such as figure 1 As shown, the nitride semiconductor device 1 of the present embodiment includes a substrate 11 and an Al x Ga (1-x) ...

no. 2 Embodiment approach 〕

[0212] use Figure 9 and Figure 10 A nitride semiconductor device according to a second embodiment of the present invention will be described. The nitride semiconductor device 2 of the present embodiment is characterized in that the structure of the composition changing layer is different from the nitride semiconductor device 1 of the first embodiment described above. Therefore, with respect to the constituent elements of the nitride semiconductor element 2 , constituent elements that exhibit the same actions and functions as those of the nitride semiconductor element 1 are denoted by the same reference numerals and their descriptions are omitted.

[0213] Figure 9 It is a perspective view schematically showing an example of the schematic configuration of the nitride semiconductor element 2 of the present embodiment. Figure 10 It is a diagram for explaining the bandgap structure of the nitride semiconductor element 2 having a laminated structure in which nitride semicond...

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Abstract

A nitride semiconductor element is provided with a nitride semiconductor active layer made of AlxGa(1-x)N and a composition change layer made above the nitride semiconductor active layer and made of Alx3Ga(1-x3)N in which an Al composition ratio x3 decreases in a direction away from the nitride semiconductor active layer. The composition change layer has a first composition change region having athickness larger than 0 nm and smaller than 400 nm and a second composition change region which is a region further away from the nitride semiconductor active layer than the first composition change region and in which the change rate of the Al composition ratio x3 in the thickness direction of the film thickness of the composition change layer is higher than that of the first composition change region, in which, in the first composition change region, the Al composition ratio continuously changes in the thickness direction of the film thickness.

Description

technical field [0001] The present invention relates to nitride semiconductor devices. Background technique [0002] There are known nitride semiconductor light emitting devices having a p-type cladding layer made of AlGaN whose Al composition decreases along the thickness direction (for example, Patent Documents 1 and 2). Patent Document 1 discloses that by inclining the Al composition of the p-type AlGaN cladding layer, the threshold current density and threshold voltage for laser excitation are lowered. Patent Document 2 discloses that by making the Al composition of the p-type cladding layer gradually decrease from the side of the electron blocking layer to the side of the p-type contact layer over the entire thickness of the p-type cladding layer, and increasing the Al composition of the p-type cladding layer in the thickness direction The reduction rate of 0.01 / nm to 0.025 / nm can obtain a Group III nitride semiconductor light-emitting device with a long life. [0003...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/22H01S5/34
CPCH01S5/221H01S5/2215H01S5/3427H01S5/22H01S5/3215H01S5/3213H01S5/2009H01S5/34333H01S5/0287H01S5/1039H01S5/2031H01S5/04257H01L33/32H01L33/025H01S5/34346H01S5/34
Inventor 佐藤恒辅岩谷素显安江信次荻野雄矢
Owner ASAHI KASEI KK
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