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High depth-to-width ratio superconducting niobium nitride nano wire as well as preparation method and application thereof

A niobium nitride nanometer, high aspect ratio technology, applied in chemical instruments and methods, manufacturing/processing of superconductor devices, nanotechnology, etc., can solve the problem of less applied research

Active Publication Date: 2020-09-18
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are few studies on the application of SNSPD in the direction of high-energy photons (ultraviolet light, X-rays, gamma rays, etc.)

Method used

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  • High depth-to-width ratio superconducting niobium nitride nano wire as well as preparation method and application thereof
  • High depth-to-width ratio superconducting niobium nitride nano wire as well as preparation method and application thereof
  • High depth-to-width ratio superconducting niobium nitride nano wire as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] In this embodiment, a high aspect ratio superconducting niobium nitride nanowire is prepared, the depth of which is 100nm, the aspect ratio is greater than 1:1, and the line width / space (L / S) is 80nm / 80nm.

[0054] The preparation method of the nanowire specifically includes the following steps:

[0055] (1) Using DC magnetron sputtering process to polish Si on both sides 3 N 4 / Si / Si 3 N 4 A NbN thin film was grown on the substrate at a sputtering rate of 1.25nm / s for 80s to prepare a 100nm thick NbN thin film; the magnetron sputtering system model was DE500 from Texas Instruments.

[0056] The room temperature sheet resistance of the prepared 100nm thick NbN thin film was measured by the four-probe method to be 23.6Ω. The superconducting transition temperature Tc was measured in a liquid helium Dewar to be 11.2K, and the superconducting transition width ΔT was 0.24K. NbN thin film superconducting transition temperature figure 2 shown.

[0057] (2) Prepare a nan...

Embodiment 2

[0071] In this embodiment, a high aspect ratio superconducting niobium nitride nanowire is prepared, the depth of which is 100nm, the aspect ratio is equal to 1:1, and the line width / space (L / S) is 100nm / 100nm.

[0072] The preparation method of the present embodiment comprises the steps:

[0073] (1) in Si 3 N 4 / Si / Si 3 N 4 Growth thickness is 100nm thick NbN thin film on the substrate, preparation method is the same as embodiment 1;

[0074] (2) Prepare the nanowire structure with the target line width / space (L / S) of 100nm / 100nm, and the L / S of the designed pattern is 150nm / 50nm.

[0075] (3) Spin coating on the surface of the NbN film by positive electron beam resist AR-P 6200.13, the preparation method is the same as in Example 1;

[0076] (4) Through the electron beam exposure system EBPG5200 with the highest accelerating voltage of 100kV, perform 4 scanning exposures, the exposure beam current is 100pA, and the exposure dose is set to 90μC / cm 2, 85μC / cm 2 、90μC / c...

Embodiment 3

[0085] In this embodiment, a high aspect ratio superconducting niobium nitride nanowire is prepared, the depth of which is 100nm, the aspect ratio is greater than 1:1, and the line width / space (L / S) is 80nm / 80nm.

[0086] The preparation method of the nanowire specifically includes the following steps:

[0087] (1) in Si 3 N 4 / Si / Si 3 N 4 Growth thickness is 100nm thick NbN thin film on the substrate, preparation method is the same as embodiment 1;

[0088] (2) Prepare a nanowire structure with a target line width / space (L / S) of 80nm / 80nm, and the L / S of the designed pattern is 120nm / 40nm.

[0089] (3) Spin coating on the surface of the NbN film by positive electron beam resist AR-P 6200.13, the preparation method is the same as in Example 1;

[0090] (4) Through the electron beam exposure system EBPG5200 with the highest accelerating voltage of 100kV, perform 4 scanning exposures, the exposure beam current is 100pA, use 4 scanning exposures, and the exposure dose is set...

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Abstract

The invention discloses a high depth-to-width ratio superconducting niobium nitride nano wire and a preparation method and application thereof. The preparation method comprises the following steps: depositing a niobium nitride film on the surface of a substrate by adopting an optimized coating technology; spin-coating an electron beam anti-etching agent on the surface of the niobium nitride film to form an electron beam anti-etching agent layer; defining a niobium nitride nano wire pattern on the electron beam anti-etching agent layer by adopting an electron beam exposure technology; and transferring the pattern to a niobium nitride film by adopting a reactive ion etching technology to obtain the high depth-to-width ratio superconducting niobium nitride nano wire. The superconducting niobium nitride nano wire with a film thickness nano wire and a depth-to-width ratio of more than 1: 1 is successfully prepared by a micro-nano processing technology combining an electron beam exposure system and reactive ion etching, and the superconducting niobium nitride nano wire can be applied to research of high-performance full-wave-band photon detectors and other related fields.

Description

technical field [0001] The invention relates to a niobium nitride nanowire and its preparation method and application, in particular to a high aspect ratio superconducting niobium nitride nanowire and its preparation method and application. Background technique [0002] Niobium nitride (NbN) is a low-temperature superconducting material widely studied in recent years. It has high superconducting transition temperature (up to 16K), critical current density and superconducting energy gap, and its thin film physical properties are stable. It can grow high-quality thin films on a large surface, and is the most commonly used material for superconducting electronic devices such as superconducting nanowire single-photon detectors, terahertz wave detection-assisted radiothermal meter mixers, and superconducting quantum interference devices. At present, the most representative SNSPD preparation mainly adopts the epitaxial method to grow high-quality ultra-thin NbN films of 3-6nm, and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B21/06H01L39/12H01L39/24B82Y30/00B82Y40/00H10N60/01H10N60/85
CPCC01B21/0617B82Y30/00B82Y40/00C01P2004/03C01P2004/04C01P2004/16H10N60/85H10N60/0128H10N60/0241H10N60/0156
Inventor 张蜡宝郭书亚陈奇潘丹峰涂学凑韩航贾小氢赵清源陈健康琳吴培亨
Owner NANJING UNIV