High-energy hydrogen ion implantation device and method

A technology of hydrogen ions and negative hydrogen ions, which is applied in the manufacture of discharge tubes, electrical components, semiconductors/solid-state devices, etc. It can solve the problem of poor beam current quality, low yield rate of semiconductor components, and difficulty in meeting high-precision semiconductor manufacturing processes. Requirements and other issues, to achieve the effect of low manufacturing cost, compact structure design, and low pollution level

Inactive Publication Date: 2020-09-18
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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Problems solved by technology

[0003] It is difficult for existing ion implanters to meet higher energy requirements, and the beam quality is poor, resulting in a low yield ...

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  • High-energy hydrogen ion implantation device and method
  • High-energy hydrogen ion implantation device and method

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Embodiment Construction

[0027] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0028] According to one embodiment of the present invention, a device for high-energy hydrogen ion implantation is proposed, and the structure diagram of the device in the debugging stage is as follows figure 1 As shown, it includes a negative hydrogen ion source 1, a first magnetic lens 2, a main accelerator, a scanning deflection device 4, a beam measuring device 5, a cryopump 7, an intermediate electrode front end 8, a high voltage electrode 9, a...

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Abstract

The invention discloses a high-energy hydrogen ion implantation method and device. The device is characterized in that a negative hydrogen ion source is located at the left side of a main accelerator,and is in sealed connection with an inlet of the main accelerator through a rubber ring; a first magnetic lens is arranged between the outlet of the negative hydrogen ion source and the inlet of themain accelerator; a cryogenic pump and a molecular pump are respectively positioned on an upper cover plate and a lower cover plate of the main accelerator; electrodes of the main accelerator comprisean intermediate electrode and a high-voltage electrode, and the intermediate electrode and the high-voltage electrode are electrified by a high-voltage power supply to form an electric field to accelerate ions; a stripping film is located on the high-voltage electrode, negative hydrogen ions are converted into protons, and a second magnetic lens is arranged between an outlet of the main accelerator and a scanning deflection device. The device is compact in structure, the same group of electrodes are used for carrying out two-stage acceleration on ions, the number of the electrodes is reduced,the size of the whole accelerator is smaller, and the manufacturing cost is lower. In addition, energy control and linkage can be accurately realized, and stable and high-energy ions can be obtained.

Description

technical field [0001] The invention belongs to the fields of proton therapy and semiconductor manufacturing, and in particular relates to a tandem accelerator. In addition, the invention also relates to a high-energy ion implanter with the accelerator, which is mainly used in the fields of IGBT and other power electronics and integrated circuit semiconductor manufacturing. Background technique [0002] In today's society, semiconductor components have penetrated into every aspect of modern life. It is the core component of most electronic products such as computers and mobile phones, such as processors and memories, which contain a large number of semiconductor components. Therefore, semiconductor components have played a vital role in modern information equipment. An important process in the semiconductor manufacturing process is ion implantation. Ion implantation refers to focusing, accelerating and deflecting ions from an ion source to irradiate the target material, t...

Claims

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Application Information

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Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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