High-energy hydrogen ion implantation device and method
A technology of hydrogen ions and negative hydrogen ions, which is applied in the manufacture of discharge tubes, electrical components, semiconductors/solid-state devices, etc. It can solve the problem of poor beam current quality, low yield rate of semiconductor components, and difficulty in meeting high-precision semiconductor manufacturing processes. Requirements and other issues, to achieve the effect of low manufacturing cost, compact structure design, and low pollution level
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[0027] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0028] According to one embodiment of the present invention, a device for high-energy hydrogen ion implantation is proposed, and the structure diagram of the device in the debugging stage is as follows figure 1 As shown, it includes a negative hydrogen ion source 1, a first magnetic lens 2, a main accelerator, a scanning deflection device 4, a beam measuring device 5, a cryopump 7, an intermediate electrode front end 8, a high voltage electrode 9, a...
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