Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for growing single crystal graphene using single crystal copper foil of arbitrary index plane

A single crystal graphene, single crystal growth technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., to achieve the effect of good application prospects, simple method and low cost

Active Publication Date: 2021-04-30
PEKING UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the growth of some uncommon plane index single-crystal copper foils (Cu(211), Cu(553)) to large sizes (such as meter-scale) is still a major problem that needs to be solved urgently in the industry, and further limits the use of Large-scale (meter-scale) single-crystal graphene grown on single-crystal copper foils with these uncommon facet indices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for growing single crystal graphene using single crystal copper foil of arbitrary index plane
  • A method for growing single crystal graphene using single crystal copper foil of arbitrary index plane
  • A method for growing single crystal graphene using single crystal copper foil of arbitrary index plane

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0036] Embodiment 1: A method of growing single crystal copper foil with an unusual index plane:

[0037] (1) Place commercial polycrystalline copper foil in a tube furnace, heat it to 150-200°C in air, and oxidize it for 60 minutes;

[0038] (two), pass into Ar gas and H 2 Gas, the flow rate is 1000sccm and 20sccm, and then start to heat up to 1050°C, and the heating process lasts for 80min;

[0039] (3) When the temperature rises to 1050°C, Ar gas and H 2 The gas flow rate remains unchanged, and the annealing process is carried out, and the annealing duration is 300min;

[0040] (4), after the annealing is finished, turn off the heating power supply, and use Ar and H 2 To protect the gas, naturally cool to room temperature.

[0041] Wherein, the uncommon index surface refers to Cu(211), Cu(323), Cu(110), Cu(236), Cu(331), Cu(256), Cu(553), Cu(659), Cu(736), Cu(748), Cu(671) and other crystal planes.

[0042] In the past, when growing single-crystal copper foils with co...

Embodiment approach 2

[0044] Embodiment 2: A method for growing single-crystal graphene using single-crystal copper foil on any index plane:

[0045] Test one:

[0046](1) Put the Cu(211) single crystal copper foil obtained in Embodiment 1 into a tube furnace, feed argon gas with a flow rate of 500 sccm, and then raise the temperature for 70 minutes to 1010° C.;

[0047] (2) When the temperature rises to 1010°C, H 2 Gas, H 2 The flow rate is 10sccm, the Ar flow rate is kept constant, the annealing process is carried out, the temperature is kept constant, and the annealing duration is 40min;

[0048] (3) After annealing, CH 4 Mixed gas with Ar (CH 4 The content is 200~20000ppm), the mixed gas flow rate is 1sccm, and the growth time is 1h;

[0049] (4) After the growth is over, turn off the heating power supply and stop feeding CH 4 gas, with Ar and H 2 In order to protect the gas, it was naturally cooled to room temperature, that is, single-crystal graphene with high-quality discrete domains ...

Embodiment approach 3

[0064] Embodiment 3: A method for growing large-size single-crystal graphene using large-size single-crystal copper foil on any index plane

[0065] This test is carried out according to the following steps:

[0066] (1) Put the large-size single crystal Cu obtained in Embodiment 1 into the tube furnace respectively, with a size of 39*18cm 2 And above, pass in argon gas, the flow rate is 500sccm, and then raise the temperature for 70min to 1010℃;

[0067] (2) When the temperature rises to 1010°C, H 2 Gas, H 2 The flow rate is 10sccm, the Ar flow rate is kept constant, the annealing process is carried out, the temperature is kept constant, and the annealing duration is 40min;

[0068] (3) After annealing, CH 4 Mixed gas with Ar (CH 4 The content is 200~20000ppm), the mixed gas flow rate is 1sccm, and the growth time is 5h;

[0069] (4) After the growth is over, turn off the heating power supply and stop feeding CH 4 gas, with Ar and H 2 In order to protect the gas, it i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
sizeaaaaaaaaaa
Login to View More

Abstract

The present invention proposes for the first time a method for growing single crystal graphene using single crystal copper foil of any index plane, said method comprising the following steps: S1, preparing single crystal copper foil of any index plane; S2, selecting said single crystal copper foil as a substrate on which high-quality super-sized single-crystal graphene is grown. The present invention is the first to grow large-size single-crystal graphene on non-Cu(111), Cu(100) and other common crystal planes, after successfully preparing Cu(211), Cu(323), Cu(110), Cu(236), Cu(331), Cu(256), Cu(553), Cu(659), Cu(736), Cu(748), Cu(671) and other single-crystal copper foils were successfully grown continuous large Single-crystal graphene with a size of 100000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000012322012223323333333333333332 "mono-layers of uniform and high-quality graphene were grown on these crystal planes.

Description

technical field [0001] The invention relates to a method for preparing super-large-size (meter-scale) single-crystal graphene by using any index-plane single-crystal copper foil as a substrate. Background technique [0002] Rouff et al. found in 2009 that high-quality single-layer graphene can be obtained by chemical vapor deposition (CVD) using copper foil as a substrate and catalyst. This method has the characteristics of simple operation and extremely low cost. Therefore, the CVD method is currently the most common method to obtain graphene, and it is also the most likely breakthrough for graphene to truly enter industrial applications. [0003] However, at present, common industrial polycrystalline copper foils are commonly used in the preparation of graphene, and their different crystal orientations, defects, roughness, and grain boundaries will have a great impact on the quality of graphene. Large-scale single-crystal copper foil in the world is the key to growing hig...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/02C30B25/10C30B25/18
CPCC30B25/10C30B25/186C30B29/02
Inventor 刘开辉张志斌俞大鹏王恩哥
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com