A kind of SIC trench gate power MOSFET device and its preparation method
A trench gate and trench technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., to achieve the effects of reducing switching loss, increasing chip area, and strong compatibility
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[0064] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.
[0065] Such as figure 2 As shown, a SiC trench gate power MOSFET device provided in Embodiment 1 of the present invention has a cell structure including metallized drain 13, N+ drain region 12, N-drift region 11 and metal source electrode 5;
[0066] The N-drift region 11 has a trench source structure, a P-type polysilicon 8, a trench gate structure, a P-type base region 7, a P+ low-resistivity region 6 and an N+ source region 4;
[0067] The trench source structure, P-type polysilicon 8 and trench gate structure are sequentially stacked on the top layer of the N-drift region 11 from bottom to top; the P-type base region 7 is located on both sides of the trench gate structure , the sides of the P+ low-resistivity...
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