Preparation method of fine-grained high-purity aluminum silicon copper alloy target blank for sputtering

A technology of aluminum-silicon master alloy and alloy target, which is applied in the field of sputtering target materials, can solve problems such as device failure, and achieve the effect of uniform structure, low content of impurity and trace elements, and good sputtering film-forming performance

Active Publication Date: 2020-09-29
XINJIANG JOINWORLD CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] Due to the solid solution of aluminum and silicon, the pure aluminum film produces aluminum sp

Method used

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  • Preparation method of fine-grained high-purity aluminum silicon copper alloy target blank for sputtering
  • Preparation method of fine-grained high-purity aluminum silicon copper alloy target blank for sputtering
  • Preparation method of fine-grained high-purity aluminum silicon copper alloy target blank for sputtering

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0062] Example 1.

[0063] (1) Master alloy preparation:

[0064] The use of 99.9995wt% ultra-pure aluminum raw material and 99.9999wt% high-purity silicon are used for the intermediate alloy configuration. Put the raw materials into a vacuum melting furnace with a weight ratio of aluminum to silicon of 88:12. The high-purity silicon raw material is broken into powder and added to accelerate the melting of silicon. The vacuum melting furnace is evacuated and then heated for smelting. After the aluminum ingot is completely melted, the temperature of the aluminum liquid is controlled to 830°C and the temperature is kept for 1 hour. A graphite rotor is used to stir the molten aluminum for 15 minutes to homogenize the composition, and cast into an AL-13wt% Si master alloy remelted ingot (there is burning during the melting process, and the actual ratio is based on the detected ratio).

[0065] The use of 99.9995wt% ultra-pure aluminum raw material and 99.999wt% high-purity copper are ...

Example Embodiment

[0072] Example 2.

[0073] (1) Preparation of master alloy: the same as in Example 1.

[0074] (2) Smelting: sawing the above-mentioned aluminum-silicon and aluminum-copper master alloy ingots into small pieces. First, it is put into a vacuum melting furnace at a ratio of 80% by weight, and then the temperature is raised for smelting after being vacuumed. After the aluminum ingot is completely melted, the temperature of the molten aluminum is controlled to 730-745°C, and the temperature is kept for 20 minutes. Sampling was detected using a photoelectric direct-reading spectrometer, and it was determined that the Si content in the aluminum liquid was 0.80wt% and the copper content was 0.41wt%. The remaining 20wt% master alloy was added twice, the smelting process was repeated once, and a sample was taken to determine that the Si content in the molten aluminum was 1.0wt% and the copper content was 0.51wt%. After casting, the bars are sampled for metal impurity element content dete...

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Abstract

The invention discloses a preparation method of a fine-grained high-purity aluminum silicon copper alloy target blank for sputtering. The preparation method of the fine-grained high-purity aluminum silicon copper alloy target blank for sputtering comprises the steps that S10, an intermediate alloy is prepared, specifically, the intermediate alloy is an aluminum copper intermediate alloy and an aluminum silicon intermediate alloy; S20, the intermediate alloy is melted with high-purity aluminum with 99.9995% purity in a vacuum smelting furnace, alloy liquid is obtained after complete melting, and in the alloy liquid, the silicon content is 0.9-1.1 wt%, and the copper content is 0.45-0.55 wt%; S30, the alloy liquid is subjected to on-line refining with high-purity argon; S40, the alloy liquidafter on-line refining is subjected to two-stage filtration; and S50, the alloy liquid after two-stage filtration is casted into a phi 120-164 mm bar blank to obtain the fine-grained high-purity aluminum silicon copper alloy target blank for sputtering. According to the preparation method of the fine-grained high-purity aluminum silicon copper alloy target blank for sputtering, the prepared high-purity AL-1 wt% Si-0.5 wt% Cu target blank for sputtering has very low content of trace impurity elements, good sputtering film-forming performance and uniform composition.

Description

technical field [0001] The invention belongs to the technical field of sputtering targets, and in particular relates to a method for preparing a fine-grained high-purity aluminum-silicon-copper alloy target blank for sputtering. Background technique [0002] The rapid development of semiconductor integrated circuits (ICs) and the increase in the degree of integration make the quality requirements of metal interconnection wires further improved. Ultra-high-purity aluminum alloy targets are the main supporting materials for metal interconnections in IC manufacturing, and their market scale is expanding day by day. The quality of the sputtering target plays a vital role in the performance of the metal thin film material. [0003] Since the aluminum-silicon-copper film contains a small amount of silicon and metal copper, the film after sputtering greatly reduces the puncture of metal aluminum, so it is widely used as a sputtering target. [0004] High-purity aluminum sputterin...

Claims

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Application Information

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IPC IPC(8): C22C1/03C22C1/06C22C21/02C23C14/34B22D11/00B22D11/119
CPCC22C1/026C22C1/03C22C1/06C22C21/02C23C14/3414B22D11/003B22D11/119
Inventor 马小红徐亚军元鹏超白毅张博刘江滨马青
Owner XINJIANG JOINWORLD CO LTD
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