Multi-junction gallium arsenide solar cell chip with positive and negative electrodes on the same side and preparation method thereof

Abstract

The invention discloses a multi-junction gallium arsenide solar cell chip with positive and negative electrodes on the same side and a preparation method thereof. After forming an epitaxial multi-junction cell structure by MOCVD on a P-type Ge substrate, chemical etching and other methods are used to form trenches. The groove is insulated and filled, and then the metal electrode is evaporated with electron beams, and the negative electrode on the light-receiving side of the battery is led to the back of the battery, so that the positive and negative electrodes are on the back of the battery. The solar battery chip prepared by the present invention can avoid electrode welding on the light-receiving surface of the battery, reduce the risk of battery damage and pollution caused by welding on the light-receiving surface, and improve the packaging yield; in addition, it is convenient for the battery to be directly welded on the The parallel circuit design on the substrate can reduce the risk of short circuit caused by the interconnection sheet welded with the electrode being easily in contact with the side wall of the battery when welding the light-receiving surface of the battery, and improve the reliability of the battery.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a multi-junction gallium arsenide solar cell chip with positive and negative electrodes on the same side and a preparation method thereof. Background technique [0002] It is well known in the industry that multi-junction gallium arsenide solar cells, as the third generation of solar cells, have the advantages of high conversion efficiency, good temperature characteristics, strong radiation resistance and light weight, and have been widely used in ground concentrating photovoltaic systems and space Power Systems. [0003] The preparation method of the traditional three-junction gallium arsenide solar cell chip is as follows: on the P-type Ge substrate, the N-type GaInP nucleation layer, the N-type GaInAs buffer layer, the tunnel junction of the bottom cell, the GaInAs sub-cell, and the top and bottom cells are sequentially prepared. Cell tunneling junction, GaInP top cell, N...

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Problems solved by technology

[0006] 3. The positive electrode and negative electrode of the battery are located on the back side of the battery and the light-receiving side of the battery respectively. When welding the negative electrode on the light-receiving side of the battery, it is easy to damage and pollute the battery, affecting the performance and appearance of the battery ;

[0007] 4. The welded negative electrode metal interconnection piece has the risk of contacting the side wall of the battery and causing a short circuit, which affects the reliability of the battery;

[0008] 5. The positive and negative electrodes of the battery are located on both sides of the battery, so it is not easy to design multiple batteries in series and parallel

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